FDA16N50LDTU Allicdata Electronics
Allicdata Part #:

FDA16N50LDTU-ND

Manufacturer Part#:

FDA16N50LDTU

Price: $ 2.96
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: UNIFET N-CHANNEL 500V MOSFET LDT
More Detail: N-Channel 500V 16.5A (Tc) 205W (Tc) Through Hole T...
DataSheet: FDA16N50LDTU datasheetFDA16N50LDTU Datasheet/PDF
Quantity: 360
1 +: $ 2.69010
10 +: $ 2.39967
360 +: $ 1.77565
720 +: $ 1.59330
1080 +: $ 1.34375
Stock 360Can Ship Immediately
$ 2.96
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-3P-3, SC-65-3 (Formed Leads)
Supplier Device Package: TO-3PN (L-Forming)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 205W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1945pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 380 mOhm @ 8.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDA16N50LDTU is a type of Insulated Gate Bipolar Transistor (IGBT) with various applications. It’s also known as Field Effect Transistor (FET). It is a type of transistor operated by the electric field created by a gate voltage applied across two conductive layers, or a metal oxide layer, that form a transistor’s channels. It\'s used in switching applications such as air conditioners, refrigerators and automotive vehicles.

The source and drain of a FET are separated by an insulated gate in order to control current. When the gate voltage is increased, the FET’s resistance decreases and current is allowed to flow more easily. Conversely, when the gate voltage is decreased, the FET’s resistance increases and current is blocked from flowing. This process is known as enhancement. As a result, a FET is used for changing the flow of electric current or as a power switch.

The FDA16N50LDTU is different from other types of FETs as it is an Insulated-Gate Bipolar Transistor (IGBT). The IGBT combines the characteristics of BJTs and MOSFETs, and operates as a voltage-controlled current source. This device takes advantage of the low input resistance and output saturation characteristics of bipolar transistors and the fast switching characteristics of MOSFETs.

The FDA16N50LDTU is used for various applications. It is used for switching power in air conditioners, refrigerators and other motor applications. It can also be used for motors, solar cell inverters and frequency converters. Additionally, it can also be used in motor control circuits, speed control, lamp dimming control and other power and control applications.

The FDA16N50LDTU also works on the principle of operation of an IGBT, in which a voltage is applied across an insulated gate and electrons are caused to pass through the channel between the source and the drain. The current can then be controlled by the gate voltage. With a given gate voltage, a fixed current can be maintained across the source and drain.

The FDA16N50LDTU has a maximum current rating of 500 A and a maximum voltage rating of 16 V. The device is rated for continuous tasks and its reverse voltage can withstand up to 25 V. It is made up of a silicon N well substrate, which reduces the power loss and ensures superior performance.

The FDA16N50LDTU is a powerful and reliable power device that can be used for a variety of applications. Its combination of low power loss and high current rating make it ideal for motor control circuits, inverters, frequency converters and other power and control applications. Additionally, its fast switching characteristics make it ideal for applications requiring frequent switching.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "FDA1" Included word is 8
Part Number Manufacturer Price Quantity Description
FDA18N50 ON Semicondu... -- 157 MOSFET N-CH 500V 19A TO-3...
FDA16N50LDTU ON Semicondu... 2.96 $ 360 UNIFET N-CHANNEL 500V MOS...
FDA1055-H-3R3M=P3 Murata Elect... 0.64 $ 500 FIXED IND 3.3UH 11.2A 7.3...
FDA16N50 ON Semicondu... -- 1000 MOSFET N-CH 500V 16.5A TO...
FDA15N65 ON Semicondu... -- 1000 MOSFET N-CH 650V 16A TO-3...
FDA16N50-F109 ON Semicondu... 2.28 $ 314 MOSFET N-CH 500V 16.5A TO...
FDA1254-H-3R3M=P3 Murata Elect... 0.73 $ 1000 3.3UH 20% 11500MA RDC=0.0...
FDA1254-H-4R7M=P3 Murata Elect... -- 1000 FIXED IND 4.7UH 10.2A 8.8...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics