Allicdata Part #: | FDA16N50LDTU-ND |
Manufacturer Part#: |
FDA16N50LDTU |
Price: | $ 2.96 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | UNIFET N-CHANNEL 500V MOSFET LDT |
More Detail: | N-Channel 500V 16.5A (Tc) 205W (Tc) Through Hole T... |
DataSheet: | FDA16N50LDTU Datasheet/PDF |
Quantity: | 360 |
1 +: | $ 2.69010 |
10 +: | $ 2.39967 |
360 +: | $ 1.77565 |
720 +: | $ 1.59330 |
1080 +: | $ 1.34375 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 (Formed Leads) |
Supplier Device Package: | TO-3PN (L-Forming) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 205W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1945pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 8.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FDA16N50LDTU is a type of Insulated Gate Bipolar Transistor (IGBT) with various applications. It’s also known as Field Effect Transistor (FET). It is a type of transistor operated by the electric field created by a gate voltage applied across two conductive layers, or a metal oxide layer, that form a transistor’s channels. It\'s used in switching applications such as air conditioners, refrigerators and automotive vehicles.
The source and drain of a FET are separated by an insulated gate in order to control current. When the gate voltage is increased, the FET’s resistance decreases and current is allowed to flow more easily. Conversely, when the gate voltage is decreased, the FET’s resistance increases and current is blocked from flowing. This process is known as enhancement. As a result, a FET is used for changing the flow of electric current or as a power switch.
The FDA16N50LDTU is different from other types of FETs as it is an Insulated-Gate Bipolar Transistor (IGBT). The IGBT combines the characteristics of BJTs and MOSFETs, and operates as a voltage-controlled current source. This device takes advantage of the low input resistance and output saturation characteristics of bipolar transistors and the fast switching characteristics of MOSFETs.
The FDA16N50LDTU is used for various applications. It is used for switching power in air conditioners, refrigerators and other motor applications. It can also be used for motors, solar cell inverters and frequency converters. Additionally, it can also be used in motor control circuits, speed control, lamp dimming control and other power and control applications.
The FDA16N50LDTU also works on the principle of operation of an IGBT, in which a voltage is applied across an insulated gate and electrons are caused to pass through the channel between the source and the drain. The current can then be controlled by the gate voltage. With a given gate voltage, a fixed current can be maintained across the source and drain.
The FDA16N50LDTU has a maximum current rating of 500 A and a maximum voltage rating of 16 V. The device is rated for continuous tasks and its reverse voltage can withstand up to 25 V. It is made up of a silicon N well substrate, which reduces the power loss and ensures superior performance.
The FDA16N50LDTU is a powerful and reliable power device that can be used for a variety of applications. Its combination of low power loss and high current rating make it ideal for motor control circuits, inverters, frequency converters and other power and control applications. Additionally, its fast switching characteristics make it ideal for applications requiring frequent switching.
The specific data is subject to PDF, and the above content is for reference
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