Allicdata Part #: | FDA18N50-ND |
Manufacturer Part#: |
FDA18N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 19A TO-3P |
More Detail: | N-Channel 500V 19A (Tc) 239W (Tc) Through Hole TO-... |
DataSheet: | FDA18N50 Datasheet/PDF |
Quantity: | 157 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 239W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2860pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | UniFET™ |
Rds On (Max) @ Id, Vgs: | 265 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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FDA18N50 is a type of single-stage transistor-based field-effect transistor (FET), which is a type of semiconductor transistor device. It is used in various applications such as electronics, computer, telecommunication and power systems. It is identified as an power MOSFET or PMOS. It is a single unit consisting of two or more p-type and n-type semiconductor materials. It can handle high voltages and power levels, and operate at extremely low voltages.
The working principle of the FDA18N50 is based on the ability of a certain amount of electrical field to change the behavior of a material. This change happens when the electrical field causes the movement of electrons or holes. It is a voltage-controlled device, so a certain voltage has to be applied to its gate as an input to produce the desired output.
The input of such a device is usually an electrical field, an electrical current or even light. The electrical field causes the electrons to jump from one region to another, forming a path of current flow. The output of such a device is the current flows, the resistance or the impedance of the path, which can be affected by the input voltage of the device.
The FDA18N50 is a popular choice for power conversion applications. It offers excellent conductivity, low on-state resistance, high frequency operation and high power efficiency. It also offers fast switching speed, low gate charge and high breakdown voltage. The device is capable of exchanging electrical power in both directions, which allows it to be used in power supplies, charger controllers and motor control applications.
The FDA18N50 is also commonly used in high-voltage industrial application, where it can provide various advantages such as protection against over-voltage, high-temperature operation, fast switching speed and low on-state resistance. This device is also ideal for switching devices in power circuits, thus reducing the cost of such circuits. The device is also used in laser diode drives, bipolar transistor drivers and custom logic ICs.
The FDA18N50 device is a great choice for many power control applications. It offers excellent features such as increased power efficiency, fast switching speed, low on-state resistance and high-temperature operation. In addition, it has low gate charge and provides protection against over-voltage. Moreover, it is capable of exchanging electrical power in both directions and can be used in various applications such as power supplies, charger controllers and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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