FDC2512_F095 Allicdata Electronics
Allicdata Part #:

FDC2512_F095-ND

Manufacturer Part#:

FDC2512_F095

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 150V 1.4A 6-SSOT
More Detail: N-Channel 150V 1.4A (Ta) 1.6W (Ta) Surface Mount S...
DataSheet: FDC2512_F095 datasheetFDC2512_F095 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: SuperSOT™-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.6W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 344pF @ 75V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 425 mOhm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Drain to Source Voltage (Vdss): 150V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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FDC2512_F095 is a type of insulated gate bipolar transistors (IGBTs). It is a three-terminal device with gate and collector terminals connected to a common gate insulated from the collector, enabling an electric current to be controlled by a voltage applied to the gate-collector junction. The FDC2512_F095 is typically used for power conversion and control applications where rapid switching performance is required.

The FDC2512_F095 IGBT is constructed using a silicon collector and an insulated gate with a refractory or "floating" gate connected to a charge-carrier device. The charge-carrier device allows the voltage at the gate-collector junction to be varied, resulting in control of current flow. This makes the FDC2512_F095 an attractive device since it can switch at higher speeds than transistors or bipolar transistors.

The FDC2512_F095 IGBT has many advantages over traditional bipolar transistors, such as lower parasitic capacitance, lower reverse-recovery time, and higher current densities. It also allows for faster switching and better output power for the same input power. The FDC2512_F095 IGBT offers improved noise performance and is well suited for high-voltage applications. For example, it can be used as an isolated switch in a DC-DC converter.

The FDC2512_F095 IGBT has a very simple working principle. A voltage applied to the gate-collector junction causes a current to flow between the collector and the gate. This current causes a change in charge at the junction, which in turn controls conduction between the collector and the drain. In other words, the collector-to-drain current is regulated by the voltage applied to the gate.

The FDC2512_F095 IGBT is used in a variety of applications, including motor control, uninterruptible power supplies, solar inverters, automotive power supplies, and power tools. It is also used in switch mode power supplies (SMPS). The FDC2512_F095 IGBT is a robust device and is able to withstand energy spikes during switching as well as withstand high voltage and high current conditions.

The FDC2512_F095 IGBT is an ideal device for power conversion and control applications where rapid switching performance is required. The IGBT has a simple working principle, making it easy to use in various applications. It is also a robust device and can withstand a variety of conditions, making it suitable for many applications. Thanks to its wide range of features, the FDC2512_F095 IGBT is the ideal choice for power conversion and control applications.

The specific data is subject to PDF, and the above content is for reference

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