
Allicdata Part #: | FDC2512_F095-ND |
Manufacturer Part#: |
FDC2512_F095 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 150V 1.4A 6-SSOT |
More Detail: | N-Channel 150V 1.4A (Ta) 1.6W (Ta) Surface Mount S... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 344pF @ 75V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 425 mOhm @ 1.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Ta) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDC2512_F095 is a type of insulated gate bipolar transistors (IGBTs). It is a three-terminal device with gate and collector terminals connected to a common gate insulated from the collector, enabling an electric current to be controlled by a voltage applied to the gate-collector junction. The FDC2512_F095 is typically used for power conversion and control applications where rapid switching performance is required.
The FDC2512_F095 IGBT is constructed using a silicon collector and an insulated gate with a refractory or "floating" gate connected to a charge-carrier device. The charge-carrier device allows the voltage at the gate-collector junction to be varied, resulting in control of current flow. This makes the FDC2512_F095 an attractive device since it can switch at higher speeds than transistors or bipolar transistors.
The FDC2512_F095 IGBT has many advantages over traditional bipolar transistors, such as lower parasitic capacitance, lower reverse-recovery time, and higher current densities. It also allows for faster switching and better output power for the same input power. The FDC2512_F095 IGBT offers improved noise performance and is well suited for high-voltage applications. For example, it can be used as an isolated switch in a DC-DC converter.
The FDC2512_F095 IGBT has a very simple working principle. A voltage applied to the gate-collector junction causes a current to flow between the collector and the gate. This current causes a change in charge at the junction, which in turn controls conduction between the collector and the drain. In other words, the collector-to-drain current is regulated by the voltage applied to the gate.
The FDC2512_F095 IGBT is used in a variety of applications, including motor control, uninterruptible power supplies, solar inverters, automotive power supplies, and power tools. It is also used in switch mode power supplies (SMPS). The FDC2512_F095 IGBT is a robust device and is able to withstand energy spikes during switching as well as withstand high voltage and high current conditions.
The FDC2512_F095 IGBT is an ideal device for power conversion and control applications where rapid switching performance is required. The IGBT has a simple working principle, making it easy to use in various applications. It is also a robust device and can withstand a variety of conditions, making it suitable for many applications. Thanks to its wide range of features, the FDC2512_F095 IGBT is the ideal choice for power conversion and control applications.
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