Allicdata Part #: | FDC2612_F095-ND |
Manufacturer Part#: |
FDC2612_F095 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 1.1A 6-SSOT |
More Detail: | N-Channel 200V 1.1A (Ta) 1.6W (Ta) Surface Mount S... |
DataSheet: | FDC2612_F095 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | SuperSOT™-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 234pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 725 mOhm @ 1.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.1A (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The FDC2612_F095, also known as a surface mount or flat-pack transistor device, is a type of single field effect transistor (FET) that is used in applications that require relatively small amounts of power or nonvolatile ions to be switched on or off. It is designed for use in a high frequency environment, such as in high speed digital circuits, and is characterized by its low on-resistance and low leakage current.
At the heart of the FDC2612_F095 is the metal oxide semiconductor FET, or MOSFET. The MOSFET is an energy-efficient type of FET, as it requires less energy to be on than it does off. In addition, a MOSFET does not require magnetic fields in order to be turned on. The MOSFET is also relatively low power and has very low on-resistance.
The FDC2612_F095 has a single P-channel FET built into its design. The primary design feature of a P-Channel device is that its gate is always connected to its drain. This means that the device will only turn on when the voltage on the gate is higher than the voltage on the drain. When the gate voltage is lower than the drain voltage, the device will remain off.
When the device is off, current will not flow through it and will be blocked by the device. However, when the gate voltage is higher than the drain voltage, current will be allowed to flow through the channel between the gate and the drain, thus completing the on-off cycle.
In addition to providing a very low on-resistance path, the FDC2612_F095 also offers a low RC time constant. The RC time constant is the amount of time it takes for the current flowing through the device to charge up any external capacitance connected to the drain. This is important for high speed digital circuits, where a low RC time constant will decrease delays in signal propagation.
The FDC2612_F095 is mainly used in applications that require a low-power device with a very low on-resistance, such as in high frequency circuits, power management circuits, digital logic control circuits, and voltage regulators.
In conclusion, the FDC2612_F095 is an efficient single FET designed for use in high frequency applications. It is characterized by its low on-resistance and low leakage current, and has a low RC time constant with minimal delays. It is used mainly in power management and high speed digital circuits.
The specific data is subject to PDF, and the above content is for reference
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