Allicdata Part #: | FDD107AN06LA0-ND |
Manufacturer Part#: |
FDD107AN06LA0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 10.9A D-PAK |
More Detail: | N-Channel 60V 3.4A (Ta), 10.9A (Tc) 25W (Tc) Surfa... |
DataSheet: | FDD107AN06LA0 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 360pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 5V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 91 mOhm @ 10.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Ta), 10.9A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDD107AN06LA0 is a type of field effect transistor (FET). This transistor is a single-type, meaning it has a single gate and only one drain-source channel. It is a lateral MOSFET, meaning that the gate is perpendicular to the channel. This makes it well-suited for using in high-speed switching applications, where very fast switching speeds are needed. It has a drain-source current rating of 60A and a drain-source breakdown voltage of 600V.
Due to its high temperature rating of 175°C and its low total gate charge, FDD107AN06LA0 is widely used in a variety of high-current, high-voltage applications. It is widely seen in various types of power supplies, as well as in AC/DC and DC/DC converters. The device is also widely used in home appliance control circuits and motor drives. Additionally, it is often used in telecommunication equipment and automotive applications due to its high stability and reliability.
The working principle of FDD107AN06LA0 mainly relies on the unique construction of the type of transistors. The main function of a FET is to act as a switch, allowing current to be selectively passed or blocked. FDD107AN06LA0 uses a single drain-source channel to do this. The gate voltage of the device is used to control and set the status of the switch, allowing current to be passed or blocked accordingly. When an appropriate gate-source voltage is applied, the channel between the drain and source will be opened and current can be passed.
When the gate voltage is reduced below a certain voltage level, the channel is reversed biased and the FET is in the off-state. In this state, the current passage is blocked, reducing power consumption and the risk of unnecessary heat-generated dissipations. Additionally, the FET can handle a high drain-source voltage, meaning that the device can be used in higher power applications, as well.
Overall, FDD107AN06LA0 is a powerful and reliable field effect transistor, capable of handling high currents and voltages. It is ideal for use in high-current, high-voltage applications, as well as a range of other applications, such as home appliance control circuits, motor drives, telecommunication equipment, and automotive applications. Its robust construction and reliable performance render FDD107AN06LA0 an excellent choice for a number of different applications.
The specific data is subject to PDF, and the above content is for reference
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