Allicdata Part #: | FDD1600N10ALZDTR-ND |
Manufacturer Part#: |
FDD1600N10ALZD |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 6.8A TO252-5L |
More Detail: | N-Channel 100V 6.8A (Tc) 14.9W (Tc) Surface Mount ... |
DataSheet: | FDD1600N10ALZD Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.25560 |
Specifications
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Package / Case: | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
Supplier Device Package: | TO-252-5 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 14.9W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 225pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3.61nC @ 10V |
Series: | PowerTrench® |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 3.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Description
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FDD1600N10ALZD Application Field and Working Principle
FDD1600N10ALZD is a Field-Effect Transistor (FET) which belongs to a category of electronic components known as Insulated-Gate Field-Effect Transistors (IGFETs). It is a device composed of two conductive regions, termed the source and drain, that are separated by a gate region, hence the term, “Field-Effect.” The source and drain regions of the FDD1600N10ALZD are made of doped silicon, and the gate region is separated from the source and drain regions by a dielectric layer. The FDD1600N10ALZD can be thought of as an electronic switch, allowing signals to pass through it according to an input voltage or current.
The FDD1600N10ALZD is a high-power advanced MOSFET, or metal-oxide semiconductor field-effect transistor, that offers excellent performance. Additionally, it offers a substantial current gain of up to 200mA, dissipating up to 80W of power and featuring an on-state voltage drop of 4V, making it suitable for many applications, including power amplifiers, motor drivers, solenoid, and even light-emitting diode (LED) drivers. Furthermore, this device offers high switching speed combined with low input and output capacitance, making it ideal for applications requiring high power and fast switching.
The basic operation of the FDD1600N10ALZD is that its gate electrode is negatively charged so that an electric field is created between the source and drain terminals. It is this electric field that allows the device to control the current flowing between the source and drain. The strength of the electric field depends on the amount of charge on the gate electrode. When a small voltage is applied to the gate electrode, the strength of the electric field increases, which allows current to flow through the device. When the voltage is removed, the electric field decreases, thereby deactivating the device.
The FDD1600N10ALZD is capable of operating over a wide temperature range, from -55° to 150° Celsius. It has a maximum drain-source breakdown voltage of 16V and a gate-source breakdown voltage of 20V. Additionally, the FDD1600N10ALZD features a maximum drain current of +/-800mA, a maximum gate-to-source voltage of +/-8V, and a maximum drain-to-source on-state resistance of 1.2Ω.
Due to its wide operating temperature range and current gain capabilities, the FDD1600N10ALZD is suitable for a variety of applications, including motor controls, lighting ballasts, joint motor drives, and PWM power supplies. Moreover, this component is especially suitable for use in temperature controlled circuits due to its low thermal resistance.
In summary, the FDD1600N10ALZD is a high-power MOSFET that is suitable for many power applications, such as motor controls, LED drivers, and PWM power supplies. It offers an excellent current gain of up to 200mA, dissipating up to 80W of power and features an on-state voltage drop of 4V. It is capable of operating over a wide temperature range, from -55° to 150° Celsius, and features a maximum drain-source breakdown voltage of 16V and a gate-source breakdown voltage of 20V. In addition, the FDD1600N10ALZD has a maximum drain current of +/-800mA, a maximum gate-to-source voltage of +/-8V, and a maximum drain-to-source on-state resistance of 1.2Ω, making it an ideal choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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