FDD4685-F085

Gate Charge (Qg) (Max) @ Vgs:	27nC @ 5V
Base Part Number:	FDD4685
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-PAK (TO-252AA)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	83W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2380pF @ 20V
Vgs (Max):	±20V
Series:	Automotive, AEC-Q101, PowerTrench®
Vgs(th) (Max) @ Id:	3V @ 250µA
Rds On (Max) @ Id, Vgs:	27 mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	8.4A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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<p>The FDD4685-F085 is an advanced MOSFET which is widely used in a variety of applications. It features a low turn-on voltage and has a low profile package that is suitable for space-constrained areas. The FDD4685-F085 is most commonly used in motor drives, industrial control, and pulse-width modulation applications. Additionally, it is used in power supply design, power switches, and low voltage circuits. </p><p>The FDD4685-F085 is a Depletion Mode Enhancement MOSFET (DMOS) which is used in the off-state to control power. It is ideal for high-voltage and high-current applications, and can be used to control low voltage signals. The device has a low resistance drain-source, which makes it more suitable for high frequency and low inductance applications. Additionally, its low gate threshold voltage makes it easy to control with logic signals, as well as analog current sources. </p><p>The FDD4685-F085 consists of a single transistor whose channel is formed between the source and drain terminals. Depending on the voltage applied to the gate terminal, the MOSFET is either in enhanced or depleted mode. In the enhanced mode, the channel is turned on, allowing current to flow from the source to the drain, while in the depleted mode, the channel is turned off, preventing current flow. </p><p>The FDD4685-F085 is rated for a drain-source voltage of 500V and a drain-source current of up to 8.5A. Additionally, it has an on-state resistance of 2 milliohms, which allows for efficient use of power. By controlling the gate voltage, the FDD4685-F085 can be used to regulate and control current flow, as well as provide protection in high current applications. Additionally, the on-state resistance is relatively low, making the device suitable for high frequency applications. </p><p>The FDD4685-F085 is a reliable device and is capable of withstanding up to 100V of transient surge voltage. Additionally, it is designed to handle over-temperature and short-circuit conditions, and is RoHS compliant, ensuring that it is safe to use and environmentally friendly. </p><p>In conclusion, the FDD4685-F085 is a reliable and efficient MOSFET which is suitable for a variety of applications. With its low profile package and low on-state resistance, it is perfect for high frequency and high current applications, such as power switches, motor drives, and pulse-width modulation. Additionally, its low gate threshold voltage allows for easy control with both logic signals and analog current sources.</p>

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