FDD4N60NZ Discrete Semiconductor Products |
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Allicdata Part #: | FDD4N60NZTR-ND |
Manufacturer Part#: |
FDD4N60NZ |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N CH 600V 3.4A DPAK |
More Detail: | N-Channel 600V 3.4A (Tc) 114W (Tc) Surface Mount D... |
DataSheet: | FDD4N60NZ Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 114W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 10.8nC @ 10V |
Series: | UniFET-II™ |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 1.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.4A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDD4N60NZ is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) specially designed for high current switching applications. It provides high performance, reliable switching, and excellent on-resistance performance. It is manufactured using the latest fabrication technology, ensuring superior performance and reliable operation.
Applications
FDD4N60NZ is a high current switching device and is ideal for a wide range of applications. It is suitable for DC/DC converters, switching power supplies, motor control, and other high-current switching applications. It can also be used in battery powered systems and other low-power switching applications.
Working Principle
The FDD4N60NZ works by controlling the current flow between the source and drain of the MOSFET. A voltage between drain and gate controls the channel width, allowing or blocking current from flowing from the source to the drain. This is called “enhancement mode” operation and is typical for n-channel MOSFETs. By controlling the gate voltage, the on-resistance between the source and the drain can be controlled and the current flowing from the source to the drain can be switched on and off.
In addition to the enhancement mode, the FDD4N60NZ is also equipped with a “depletion mode” feature. This feature allows the device to be used not only to switch on and off current, but also to regulate the current flow. By changing the gate voltage, the device can be made to act like a variable resistor, controlling the current flow.
The FDD4N60NZ is also equipped with various protection features such as over-temperature, over-voltage, and under-voltage protection. This ensures reliable operation, even in the harshest of environments.
Conclusion
The FDD4N60NZ is a high current, high performance switching device. It is specially designed for applications requiring high current switching and excellent on-resistance performance. It is equipped with various protection features, ensuring reliable operation in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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