Allicdata Part #: | FDD4685TR-ND |
Manufacturer Part#: |
FDD4685 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 40V 8.4A DPAK |
More Detail: | P-Channel 40V 8.4A (Ta), 32A (Tc) 69W (Tc) Surface... |
DataSheet: | FDD4685 Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 5V |
Base Part Number: | FDD4685 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 69W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2380pF @ 20V |
Vgs (Max): | ±20V |
Series: | PowerTrench® |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 8.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.4A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The FDD4685 is a single-channel transistor manufactured by Fairchild Semiconductor. It is a MOSFET type device, and is used for switching and amplifying applications. The device is classified as a low-side gate driver, meaning that it is designed to control a single MOSFET gate with a low-side output. It is designed to be compatible with 3.3V and 5V logic systems and can handle currents up to 4A. The device is available in a 3x3x0.7mm QFN package.
The FDD4685 is used in a variety of applications, most notably switching applications. The device can be used to power high-current loads, such as motors, LEDs and other high-power components. It can also be used in amplifier circuits, as it can operate at high frequencies and provide high-performance amplification. In addition, the device can be used in power control circuits and voltage regulators.
The FDD4685 is a single-channel device, meaning that it can only control one MOSFET gate at a time. The device is designed to be used with a standard logic-level MOSFET, and is capable of controlling up to 4A of current. It is designed to be used in either a single MOSFET circuit, or in a dual MOSFET configuration, depending on the application. The device is also designed to be compatible with 3.3V and 5V logic systems.
The working principle of the FDD4685 is based on the fact that MOSFETs are basically high-impedance switches. This means that the FDD4685 is designed to switch the gate of the MOSFET on and off in order to control the flow of current through the device. When the gate is switched on, the current can flow, and when the gate is switched off, the current will be blocked. The switching operation of the device is controlled by the logic-level signals that are sent to the device.
The FDD4685 has several features that make it an ideal device for switching applications. These features include low voltage drop, low power dissipation, high current capability and high speed. The device also has a low-side output, which allows it to control the MOSFET gate from either the high or low side of the MOSFET. This makes the device ideal for applications requiring both high- and low-side outputs.
The FDD4685 is an excellent choice for applications where fast switching and high-performance amplification are desired. It is also ideal for power control and voltage regulation circuits. The device is available in a 3x3x0.7mm QFN package, making it suitable for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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