Allicdata Part #: | FDD4685TF_SB82135-ND |
Manufacturer Part#: |
FDD4685TF_SB82135 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 40V DPAK |
More Detail: | P-Channel 40V 8.4A (Ta), 32A (Tc) Surface Mount D... |
DataSheet: | FDD4685TF_SB82135 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 5V |
Base Part Number: | FDD4685 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-PAK (TO-252AA) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2380pF @ 20V |
Series: | PowerTrench® |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Rds On (Max) @ Id, Vgs: | 27 mOhm @ 8.4A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 8.4A (Ta), 32A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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FDD4685TF_SB82135 is a single n-channel Power MOSFET from Fairchild Semiconductor. This device features low on-state resistance and is designed to perform with low gate charge. It is intended for use in systems that require adjustable power management, such as portable and mobile equipment, mobile computing, and medical instrumentation.
The FDD4685TF_SB82135 is a single n-channel MOSFET constructed with a single gate and four source connections. The device has a drain-source voltage of 30V, a drain current of 4.6A, a gate threshold voltage of -2.5V, and a gate capacitance of 66 nF. Its on-state resistance is normally 3 ohms, but it can be adjusted by changing the external gate voltage.
The FDD4685TF_SB82135 is an ideal choice for applications such as Smart Multiports (SMP) for adjusting the output power of multiple ports, load switches, and current limiters. This device can also be used in power over Ethernet (PoE) applications to provide remote power control.
The FDD4685TF_SB82135 is a voltage-controlled device, which means its operation depends on the voltage applied to the gate terminal. The device will be either “on” or “off” depending on the gate voltage. A gate voltage of zero or lower will result in the device being “off”, while a gate voltage above zero will result in the device being “on”.
When the device is “on”, it will source current from the source terminal to the drain terminal. The amount of current that can be sourced depends on the voltage applied to the gate terminal. The higher the gate voltage, the higher the current that can be sourced. When the device is “off”, no current can be sourced from the source terminal to the drain terminal.
In summary, the FDD4685TF_SB82135 is a single n-channel power MOSFET designed for adjustable power management applications. It features a low on-state resistance and is capable of sourcing current depending on the gate voltage applied. The device can be used in load switches, current limiters, and other applications requiring remote power control.
The specific data is subject to PDF, and the above content is for reference
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