FDS3601

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FDS3601 is an advanced field-effect transistor (FET) array. FETs are a type of transistor that modulates the flow of electrical current in a circuit. They are the building blocks of microelectronics, enabling the creation of much more complex circuits in smaller spaces. FETs play a crucial role in the development of modern electronics technology. The FDS3601 is one of the most advanced FET arrays available, offering numerous advantages and features tailored to specific applications.

The FDS3601 consists of four interconnected N-channel MOSFETs, each with its independent gate terminal. This allows the transistor array to switch in both directions, enabling the device to support a wide range of high-frequency applications. The MOSFETs have been designed with an optimized thermal resistance junction to enable superior high-temperature operation. The package size is also small, allowing for more efficient heat dissipation.

The FDS3601 is low threshold, offering a relatively low gate-to-source voltage for successful operation. This further enhances the device’s performance in high-frequency applications. The FET also has an improved gate charge–source capacitive coupling that maximizes noise reduction. The device has a limited drain-to-source breakdown voltage rating of 20 volts, allowing for higher voltage operation over a greater range of circumstances. The FDS3601 also integrates low-resistance drain and source electrodes, helping to reduce power loss during operation.

The FDS3601 is an ideal choice for many high-frequency applications. The integrated MOSFETs offer superior speed and low loss characteristics, resulting in faster switching rates and improved circuit performance. The device is well-suited for many power conversion applications, such as non-isolated DC/DC converters, high current battery management systems, and high-Speed data communications. Additionally, the FDS3601 is widely used in automotive and industrial controllers, as well as in medical instrumentation.

The distinctive architecture of the FDS3601 enables the device to operate with greater efficiency than other FETs. The FET array works on the principle of resistance modulation. When a positive gate signal is applied, the number of electrons caused to flow through the channel increases, thereby increasing the channel’s resistance. This reduces the power in the drain and the successively sourced current is significantly less than the drain current. As current through the channel is decreased, the channel’s resistance is increased, leading to further losses in the drain-source voltage.

The FDS3601 manufactures reliable reliability and system performance for a wide range of applications due its advanced architectural design. Its combination of low voltage, high current switching and improved gate capacitive coupling makes it an ideal choice for power conversions. The device’s low thermal resistance helps ensure greater system reliability, making it a preferred choice for high-frequency applications.

The specific data is subject to PDF, and the above content is for reference