FDS3170N7

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The FDS3170N7 is a high-powered insulated gate bipolar transistor (IGBT) that is primarily used for power switch applications in highly-demanding fields. It is developed to deliver high efficiency and low power losses in order to maximize performance. This type of transistor is found in several switchgear applications such as current regulation for heavy machinery, motor controllers, and various driving circuits. This IGBT has a fast switching speed and is able to maintain reliable operation even in severe conditions.

The FDS3170N7 features a power range of 100 to 1700V, making it suitable for a number of different types of applications. It also has a forward current range of 15A to 200A, allowing it to be used in different power settings. In addition, the FDS3170N7 has a low driver power requirement of 25W, making it an attractive choice for power switch applications.

The main component of the FDS3170N7 is a metal oxide-semiconductor field-effect transistor (MOSFET). This type of transistor operates in a very similar way to a regular field-effect transistor (FET), but with one important exception: a MOSFET uses a metal oxide layer as an insulator between the gate and the source terminals. This layer is able to control the current flow from the source to the drain terminal without a significant loss in power.

The FDS3170N7 uses a source voltage of 6.5 to 1700V and is able to control a maximum voltage of 2 times the source voltage. It takes a minimum gate charge of 16nC in order to turn the transistor on or off. The rise and fall times of this transistor are also quite fast, at 2.5µs and 3µs respectively.

The main application of the FDS3170N7 is in power switches. In this application, the transistor acts as a switch that is able to regulate the current and voltage levels when turned on or off. This transistor can also be used in high power applications where high frequency switching is required, and is often used as an inrush current limiter. The FDS3170N7 is also commonly found in many motor controllers, power amplifiers, and high-voltage power supplies.

The FDS3170N7 is a high power, high voltage insulated gate bipolar transistor (IGBT) that is primarily used for power switch applications. It takes a minimum gate charge of 16nC in order to turn the transistor on or off, and is able to control a maximum voltage of 2 times the source voltage. Applications of this transistor include current regulation in heavy machinery, motor controllers, and various driving circuits, as well as inrush current limiting, power amplifiers, and high-voltage power supplies.

The specific data is subject to PDF, and the above content is for reference