FDS3572

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FDS3572 is a single N-Channel MOSFET, designed and manufactured by Fairchild Semiconductor, suitable in many electronic applications. It is a discrete electronic component which uses the field effect transistor (FET) technology. The FDS3572 is a 12V N-channel power MOSFET which offers high performance in a very small package. It is capable of delivering up to 1.3A continuous drain current and a power dissipation of up to 3 watts.

FDS3572 Application Field

The FDS3572 is widely used in a variety of applications including power management, motor control and lighting control. It is widely used in automotive and off-road equipment, enabling low on-resistance, low gate charge and low input capacitance which is essential for efficient designs. The FDS3572 is ideal for power converter and switching applications, providing high power efficiency and high forward switched current capability. It is also widely used in mobile device design and power management, providing low on-resistance in a small package. In addition, the FDS3572 is highly suitable for industrial and appliance applications such as induction cookers, Infra-Red sensors, automotive relays and power supply regulators.

FDS3572 Working Principle

The FDS3572 is a single N-Channel MOSFET, which uses the field effect transistor (FET) technology. The FDS3572 is designed with a drain to source breakdown voltage of -12V and a maximum drain-source resistance of 1.5 Ohms. The device is operated using the voltage applied to the gate of the FET, which attracts the electrons in the channel of the FET, creating an inversion layer. This voltage also sets the value of the drain current. The maximum drain current of the FDS3572 is 1.3A, making it suitable for high power applications.

The FDS3572 has a high switching speed, due to its low on-resistance and low gate charge. It has low input capacitance, which helps to reduce power consumption and improves the efficiency of the device. As the power FET requires very low gate drive voltage, it is suitable for low power applications as well. The FDS3572 is also designed with a thermal shutdown feature, which helps to protect the device against over temperature conditions by automatically disconnecting the gate from the source and removing the current from the drain.

Conclusion

In conclusion, the FDS3572 is a versatile single N-Channel MOSFET, designed and manufactured by Fairchild Semiconductor. It is capable of delivering up to 1.3A continuous drain current and a power dissipation of up to 3 watts. It is widely used in a variety of applications such as power management, motor control and lighting control. Furthermore, the FDS3572 offers a high switching speed, low on-resistance, low gate charge and low input capacitance, making it suitable for both high power and low power applications. It is also designed with a thermal shutdown feature to help protect the device against over temperature conditions.

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