FDS3590 Allicdata Electronics
Allicdata Part #:

FDS3590TR-ND

Manufacturer Part#:

FDS3590

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 6.5A 8SOIC
More Detail: N-Channel 80V 6.5A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: FDS3590 datasheetFDS3590 Datasheet/PDF
Quantity: 5000
Stock 5000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 39 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The FDS3590 is a high voltage single N-channel power MOSFET primarily used in high-power applications. It is designed with a low resistance internal gate structure and intended for usage in low gate charge and low power consumption operation. This device is suitable for use in switching power supply, motor control and lighting control applications.

The main feature of this device is its high voltage capacity. It can operate with a maximum voltage supply of up to 150 V, allowing it to be used in applications with high voltage input. This feature also ensures the FDS3590 can be used in applications where protection against overvoltage is required. Additionally, the device features a low on-resistance which enables it to provide high power operation while consuming minimal power during operation.

The FDS3590 is a Field-Effect Transistor (FET). It is also known as a Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). It is an electronic device that functions as an electronic switch or gate. FETs are made of a combination of metals, an insulating gate layer and a gate electrode. MOSFETs are comprised of two metal electrodes, metal gate and an oxide insulating layers. The two metal electrodes, source and drain, are the input and output of the MOSFET, while the metal gate electrode is used to control the flow of electric current between the source and drain.

The FDS3590 works on the principle of surface charge. When a voltage is applied to the gate electrode, over the insulating oxide layer, electric field is generated. This electric field affects the motion and number of charge carriers in the semiconductor material, thus regulating the flow of current between the source and drain. This makes the FDS3590 an effective switch and is the basis of its operation.

The FDS3590 is suitable for applications such as motor control, lighting control, and switching power supplies due to its combination of high voltage capacity, low on-resistance and small size. Additionally, its low gate charge and low power consumption enable it to be used in low power applications. The FDS3590 is popular amongst design engineers due to its long lifespan and reliability.

The specific data is subject to PDF, and the above content is for reference

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