FDS3692

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	746pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Series:	PowerTrench®
Rds On (Max) @ Id, Vgs:	60 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Current - Continuous Drain (Id) @ 25°C:	4.5A (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The FDS3692 is an enhancement-mode MOSFET from Fairchild Semiconductor, which is widely used in applications requiring low resistance and low power dissipation. It is generally used as a switch or a voltage regulator, and can also be used to control current levels in some cases.The FDS3692 is a single field-effect transistor, which functions by leveraging the effect of electric fields to regulate the flow of charge carriers through the transistor. It has an inherently wide range of applications due to its small form factor and simple functioning principles.The FDS3692 features a drain-source voltage of +-20V, a drain-gate voltage of +-20V, a gate-source voltage of +-8V, and a drain-source current of 150A. Its breakdown voltage is approximately +-45V, and it has a zero-gate voltage source-drain current of 100nA. Its quiescent gate-source voltage is +-5V, and its gate output current is 1mA.The FDS3692 has a gate drive voltage of 5V, a gate-source capacitance of 8 pF and a channel resistance of 0.7Ω. It has a channel temperature range of -55°C to +150°C, a turn-on delay time of 0.6 ns and an off-state leakage of 1μA. It also features a low-threshold gate voltage of 4V and a junction temperature of 150°C.The FDS3692 is particularly well suited to switching applications, as it has a low RDS(ON) that allows for high current carrying capacity and fast switching times. It is also useful for low power applications that require a low-power MOSFET, as it has low power dissipation. In addition to its low power dissipation, the FDS3692 also has a low input capacitance, which is useful for applications that require high performance switching capability. The FDS3692 also features a low gate threshold voltage, which makes it particularly suitable for low-voltage applications.The FDS3692 is also useful for voltage regulation applications, as it has a low transit time of 0.6 ns and a low threshold voltage that allows for higher frequency operation.Finally, the FDS3692\'s low on resistance and low drain-source voltage make it ideal for controlling current levels in some applications. It can be used to control the continuity of a signal, or to convert an AC to a DC voltage. The FDS3692 is easy to use and is generally preferred over other MOSFETs due to its low resistance, fast switching time and small form factor. Its low cost and high reliability also make it a popular choice for many applications.

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