FDS3512 Allicdata Electronics
Allicdata Part #:

FDS3512TR-ND

Manufacturer Part#:

FDS3512

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 80V 4A 8SOIC
More Detail: N-Channel 80V 4A (Ta) 2.5W (Ta) Surface Mount 8-SO
DataSheet: FDS3512 datasheetFDS3512 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 634pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Series: PowerTrench®
Rds On (Max) @ Id, Vgs: 70 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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FDS3512 is a power MOSFET, which is used in many types of modern electronic circuit applications. It is an insulated gate bipolar transistor (IGBT) which is used for switching and amplifying signals in digital circuits. FDS3512 was developed by Motorola in the late 1960s as an improved version of the FJT, which was the first digital electronic device. FDS3512 is now commonly used in computers, mobile phones, and other electronic devices for power switch circuits that require low voltage and high current switching.

FDS3512 consists of two MOSFETs in a common source configuration. Each one has its own gate voltage, which is usually separated by a diode. The common source is connected to the drain and the gates of each MOSFET are used to drive the voltage of the drain. The gate voltage is typically greater than the voltage of the drain. The common source is used to insure that the transistors operate as a single unit, rather than as individual devices.

FDS3512 works in a similar way to other MOSFETs. When a voltage is applied to the gate, an electric field is created, which causes a charge to move from one side of the gate to the other. This change creates a depletion region between the drain and the source, which results in a voltage drop across the channel. This voltage drop is then amplified by the drain current and causes the transistor to switch state, which is why FDS3512 is commonly used for digital switching applications.

FDS3512 is also commonly used for linear amplification applications. When operating in this mode, the gate voltage is adjusted to cause an appropriate output voltage, which is used to drive loads such as motors, speakers and other transducers. The gate voltage is usually adjusted within a certain range to achieve a linear output. This range is determined by the voltage swing of the drain current and the load impedance.

The advantages of FDS3512 include its very low on-resistance, which means that it will dissipate very little power when switching and its high voltage capability, which allows for higher input voltages and better control of the load. It is also very small and can fit into very cramped spaces. However, the biggest disadvantage is its high gate-drain capacitance, which can limit its speed. The high gate capacitance means that it can take some time for the voltage to charge and switch states, which can limit its use in high-speed applications.

FDS3512 is a versatile device that is used in many circuits, from digital logic to linear amplifiers. It is a well-designed device that can switch and amplify signals with very little power dissipation, making it an ideal choice for many applications. Its high voltage capability and small size make it suitable for a wide range of devices and its low gate-drain capacitance allows it to be used in high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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