FMMT717TC Allicdata Electronics
Allicdata Part #:

FMMT717TC-ND

Manufacturer Part#:

FMMT717TC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS PNP 12V 2.5A SOT23-3
More Detail: Bipolar (BJT) Transistor PNP 12V 2.5A 110MHz 625mW...
DataSheet: FMMT717TC datasheetFMMT717TC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 2.5A
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 2.5A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Power - Max: 625mW
Frequency - Transition: 110MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Base Part Number: FMMT717
Description

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Introduction

FMMT717TC is a single bipolar junction transistor(BJT). It is widely used in consumer electronics and other digital systems. Its applications include high-power switching, amplification, digital logic, and voltage control. This article will discuss the FMMT717TC application field, working principle, and other technical characteristics.

Application Field of FMMT717TC

FMMT717TC is a type of NPN transistor. It is typically used in consumer electronics, including audio amplifiers, linear switching (including battery chargers), and digital logic circuitry. It is suitable for low-voltage and high-speed switching applications. The FMMT717TC is also popular in high-power load switches, as well as audio amplification,analog control systems, and switched-mode power supplies.

Working Principle of FMMT717TC

The working principle of the FMMT717TC is similar to that of any NPN transistor. An NPN transistor consists of three layers, an emitter, a base, and a collector. When a voltage is applied to the base, it allows current flow between the emitter and collector. In the case of an FMMT717TC, when the base voltage is higher than the emitter voltage, the transistor will start to conduct current.

The transistor also has two internal junctions, called the base-emitter and the base-collector junctions. The base-emitter junction is responsible for controlling the current flow through the transistor, while the base-collector junction controls the voltage gain. The voltage gain is directly related to the current flowing through the transistor and can be adjusted by changing the base current.

Other Technical Characteristics of FMMT717TC

The FMMT717TC has a collector-emitter breakdown voltage of 40V, with a power gain (hfe) of 200. Additionally, its base-emitter voltage ranges from 4v to 4.5v. The collector-emitter saturation voltage is 0.2V and its unity current gain cutoff frequency is 7 MHz. The maximum current gain of the FMMT717TC is 800 and it has a total power dissipation of 1.2W.

Conclusion

The FMMT717TC is a single bipolar junction transistor (BJT) that is used in consumer electronics, switching, and amplification applications. Its working principle is similar to any NPN transistor and it has various technical characteristics, such as a high-power gain and a power dissipation of 1.2W. The FMMT717TC is a versatile transistor with a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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