FQB85N06TM_AM002 Allicdata Electronics
Allicdata Part #:

FQB85N06TM_AM002-ND

Manufacturer Part#:

FQB85N06TM_AM002

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 85A D2PAK
More Detail: N-Channel 60V 85A (Tc) 3.75W (Ta), 160W (Tc) Surfa...
DataSheet: FQB85N06TM_AM002 datasheetFQB85N06TM_AM002 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D²PAK (TO-263AB)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4120pF @ 25V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 112nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 10 mOhm @ 42.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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FQB85N06TM_AM002 is a power N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) which is widely used in many types of electronic circuits. The device of MOSFET is unique and owns many advantages, such as high input impedance, high switching speeds, low noise, low power consumption and low voltage requirements, making it one of the most important components in modern electronic circuits.

In its application field, FQB85N06TM_AM002 MOSFET features high current capabilities and is designed for use in medium voltage and high frequency circuits. It is normally used for Power Supply and Switching applications such as DC/DC conversion, Motor Control, Buck Converter and Motor Control. It is also used in high-power-level isolated amplifiers, high-speed pulse circuits and in many other electronic devices.

The working principle of FQB85N06TM_AM002 MOSFET is pretty simple. It consists of multiple gate, drain and source terminals with a gate body and source connected together, forming a channel between source and drain. This channel will either allow or block the current, depending on the voltage applied to the gate terminal. When a positive voltage is applied to the gate, it will attract electrons from the drain and form a low resistance between source and drain. Consequently, this grants access to the charge carriers in the channel and current will flow in the circuit.

When a negative voltage is applied to the gate, it will repel the electrons and form a high resistance between the source and drain. This blocks the current in the circuit. Furthermore, a certain degree of electrical insulation will be achieved between the main circuit and the MOSFET. This offers an additional layer of protection in the circuits when it is necessary.

In conclusion, FQB85N06TM_AM002 is a very useful and effective MOSFET that offers high current capabilities, high input impedance and low power requirements. It is used for many types of electronic applications, such as DC/DC conversion, Motor Control, Buck Converters and Amplifiers. Its working principle is also fairly straightforward: when a positive voltage is applied to the gate, it will allow current to pass through and when a negative voltage is applied, it will block the current.

The specific data is subject to PDF, and the above content is for reference

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