FQB8N60CTM-WS Discrete Semiconductor Products

Series:	QFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600V
Current - Continuous Drain (Id) @ 25°C:	7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.2 Ohm @ 3.75A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	36nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1255pF @ 25V
FET Feature:	--
Power Dissipation (Max):	3.13W (Ta), 147W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263AB)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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FQB8N60CTM-WS Applications and Working PrincipleFQB8N60CTM-WS is a field-effect transistor (FET) with a N-channel structure. It belongs to the family of single-gate, metal-oxide semiconductor FETs (MOSFETs). This type of FET is most often used as a switch in electronic circuits. In this article, we will discuss the applications and working principle of FQB8N60CTM-WS.Applications of FQB8N60CTM-WSFQB8N60CTM-WS can be used in a variety of applications. It is especially useful in power electronics because of its high breakdown voltage of 500V and its maximum current of 25A. Its power-handling capability makes it suitable for BLDC motor drive systems and other low-power applications.Another application of FQB8N60CTM-WS is as a switch in electronic circuits. Its small gate charge and low gate-to-drain capacitance make it suitable for use in high-speed switching circuits. It can also be used as a switch in low-noise systems thanks to its low input capacitance.Finally, FQB8N60CTM-WS is often used in power supplies and protection circuits. It can be used as a control element in power supplies to regulate the power output. It is also used in overvoltage protection circuits to activate other components when the voltage exceeds a certain threshold.Working Principle of FQB8N60CTM-WSFQB8N60CTM-WS is a FET with a N-channel structure. This type of transistor is known as a voltage-controlled device because its conductivity is determined by the voltage applied to its gate.When a positive voltage is applied to the gate, the transistor is in its “ON” state. This means that a current will flow from the source to the drain. When a negative voltage is applied to the gate, the transistor is in its “OFF” state. This means that the current is effectively blocked. The current that flows through the transistor is related to the voltage applied to its gate. The higher the voltage, the greater the current. This is known as the transconductance of the transistor.ConclusionFQB8N60CTM-WS is a N-channel MOSFET with a wide range of applications. It can be used in low- and high-power systems as a switch, a regulator, and an overvoltage protection circuit. Its working principle is based on the voltage applied to its gate, which determines the flow of current through the transistor.

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