FQB8N60CTM Discrete Semiconductor Products

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The FQB8N60CTM is a reliable, high-speed, low-on-resistance 800V vertical power metal-oxide-semiconductor field-effect transistor (MOSFET). This product is part of the 0.55 Conventional Planar Technology family. Developed for modern high power surface mount application, the FQB8N60CTM provides unparalleled performance in low-on-resistance, high-speed switching, low-thermal impedance, low gate charge and low gate drive power requirements.

FQB8N60CTM\'s primary application field is in high power SMPS, power factor correction (PFC), and other high power applications that require improved system efficiency and reduced power dissipation. The FQB8N60CTM is also suitable for motor control and induction motor drive applications, where high efficiency and system robustness are desired. With a maximum current rating of 80A, the FQB8N60CTM delivers excellent performance in these applications.

The operating principle of the FQB8N60CTM is similar to other MOSFETs. The primary function of an MOSFET is to control the current flow through a circuit. The FQB8N60CTM uses a metal-oxide-semiconductor gate structure with four terminals, the source, the drain, the gate and the bulk. When an electric field is applied between the source and the drain, the gate allows current to flow through the channel between the source and the drain. The gate voltage regulates the drain current and is used to control the amount of current flowing through the channel. The FQB8N60CTM features high efficiency in both off and on state, as well as high frequency switching characteristics for a variety of applications.

There are several features that make the FQB8N60CTM an excellent choice for high power applications. First, it has an exceptionally low-on-resistance, which makes it ideal for applications where power dissipation is a concern. Second, its low gate charge enables high-speed operation and improved efficiency. Additionally, the FQB8N60CTM has a low thermal impedance and excellent high temperature performance. The device also has a wide body to gate voltage ratings and is offered in Common Cathode design.

In conclusion, the FQB8N60CTM is a reliable, high-speed, low-on-resistance 800V vertical power MOSFET specifically designed for high-power applications. With its low-on-resistance, low gate charge, low thermal impedance and excellent high temperature performance, the FQB8N60CTM is an ideal solution for modern applications. With its wide body and gate voltage ratings, the FQB8N60CTM is also suitable for motor control, induction motor drive, and power factor correction applications.

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