FQB8P10TM Discrete Semiconductor Products

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The FQB8P10TM is a silicon-gate power MOSFET manufactured by Vishay. This type of MOSFET is designed for use in switching and other power applications. It is a single enhancement-mode device with a maximum drain-source breakdown voltage of 800V.

An enhancement-mode MOSFET has an off-state gate-to-source voltage (VGS) of zero volts, which makes it useful for digital, low-current, and low-voltage applications. Its on-state resistance (RDSon) is low, making it suitable for high-current applications. In addition, it has high power density, a fast switching time, and low input capacitance, making it suitable for high-performance applications.

The FQB8P10TM MOSFET is ideal for high-efficiency switching applications such as motor drives, smart power IC switches, and DC/DC converters. It can also be used in various audio, video, and communication switching applications. Its low gate-to-drain capacitance (CISS) makes it suitable for high-frequency applications such as RF switches.

The FQB8P10TM operates using negative-channel depletion-mode processing. It has a linear transfer characteristics, allowing it to switch quickly and at high efficiency. This makes it suitable for applications that require high-speed switching, such as resonant switching, power factor correction, PWM, and other high-efficiency power applications.

The FQB8P10TM MOSFET is designed with a reverse-drain-source breakdown voltage of 800V and a low-source threshold voltage of 4V. It also features a junction charge of 8nC, a drain-source capacitance of 18pF, an upper gate-drain capacitance of 5.5pF, and a gate-source capacitance of 2.5pF. The MOSFET also exhibits low gate charge and low gate leakage current, making it immune to ESD damage.

The FQB8P10TM is suitable for applications requiring a high current and low impedance characteristics. It can be used in applications such as power factor correction, power amplifiers, motor controller drives, and high-efficiency switching power supplies. It can also be deployed in audio, video, and communication systems.

In conclusion, the FQB8P10TM silicon-gate power MOSFET provides high efficiency, high power density, low input capacitance, and fast switching time. This makes it suitable for a wide range of applications and industries. It is a reliable and cost-effective solution for digital, low-current, multi-purpose, and switching applications.

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