FQD8P10TF Allicdata Electronics
Allicdata Part #:

FQD8P10TF-ND

Manufacturer Part#:

FQD8P10TF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET P-CH 100V 6.6A DPAK
More Detail: P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Surfa...
DataSheet: FQD8P10TF datasheetFQD8P10TF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 530 mOhm @ 3.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The FQD8P10TF is a type of Field Effect Transistor (FET) known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is classified as a single FET because it has one gate terminal (the source) and two drain terminals (the drain and source). The FQD8P10TF is a P-Channel enhancement-mode Power MOSFET, meaning that it can only be turned on when voltage is applied. When the gate is left open, the FQD8P10TF remains off. The FQD8P10TF is used primarily in power management applications, such as portable electronics, computers, and automotive electronics. It is used for power control and motor control, providing fast switching and high efficiency.

The FQD8P10TF works on the principle of the "Field Effect," which is the ability of a voltage applied to a gate (G) to control the flow of current from the source (S) to the drain (D). This is accomplished by creating a field between the gate and the source, which modulates an electric field that extends from the gate to the source. In a MOSFET, this field is specifically generated by the application of a voltage, either positive or negative, depending on the type of FET in use. The FQD8P10TF is a P-Channel FET, meaning that it requires a positive voltage to be applied to the gate in order to turn it on. Once the gate has been biased with a positive voltage, a current can flow from the source to the drain.

The FQD8P10TF is rated for 60 volts and a maximum total drain current (ID) of 8 Amps. It has a maximum power dissipation of about 200 Watts and a maximum junction temperature (Tj) of 175 degrees Celsius. The FQD8P10TF features Gate-Source capacitance (Miller effect) reduction that improves charge and discharge characteristics, and a low reverse transfer capacitance. The FQD8P10TF is also specifically designed to minimize switching losses, minimize energy loss during turn-off, and provide fast switching.

The FQD8P10TF is commonly used in power management applications. It is used to control the flow of current in circuits, and provide a safe and efficient method of controlling large power loads. It can be used in a wide range of applications, such as motor control, DC-DC converters, inverters, and power supplies. The FQD8P10TF is also used for switching high-current devices on and off, such as contactors, solenoids, and motors.

The FQD8P10TF is a reliable and highly efficient component, and is ideal for applications that require fast switching and high power dissipation. Its low gate capacitance and high frequency characteristics make it ideal for use in high frequency circuits. The FQD8P10TF is also one of the most widely used MOSFETs due to its low cost and ease of use.

The specific data is subject to PDF, and the above content is for reference

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