FQD8P10TM_F080

Series:	QFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	530 mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	470pF @ 25V
FET Feature:	--
Power Dissipation (Max):	2.5W (Ta), 44W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D-Pak
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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The FQD8P10TM_F080 is a high power MOSFET that is typically used in a variety of applications including power applications, high speed switching, and other demanding applications. The FQD8P10TM_F080 is a MOSFET that has a low on-state resistance, good drain to source breakdown voltage, and low gate charge. This makes it suitable for applications where a high power device is needed but it is also important to maintain good efficiency. Application Fields
The FQD8P10TM_F080 MOSFET is typically used in applications that require large switching currents and/or high power dissipation. Examples of these are in applications such as automotive, lighting, and telecommunications amongst others. The FQD8P10TM_F080 is commonly used as a switching element in power converters, as a switch in DC-DC converters, and in DC motors. In telecommunications, the FQD8P10TM_F080 is used for switching in both switching, routing and access applications. In automotive applications, the FQD8P10TM_F080 is typically used to drive large loads such as brushless motors.Working Principle
The FQD8P10TM_F080 MOSFET is an N-channel MOSFET that operates on the principle of conduction and insulation between the source and the drain. A positive gate voltage will create an electric field which attracts electrons from the source and forces them into the channel which turns the MOSFET on. When the gate voltage isNegative, the electrons are repelled from the channel and the MOSFET is turned off. The FQD8P10TM_F080 has a low gate charge, which allows for fast and efficient switching.The FQD8P10TM_F080 has a low on-state resistance and a good drain to source breakdown voltage, which makes it suitable for applications where power dissipation and/or current consumption are of a concern. This MOSFET is also relatively easy to drive and has good temperature stability.In addition, the FQD8P10TM_F080 has an internal limiting diode which helps to protect circuits against overvoltage. This makes it suitable for use as a power switch in AC-DC and DC-DC converters, as well as applications where it is necessary to limit voltage transients.Overall, the FQD8P10TM_F080 is a versatile and efficient MOSFET that is suitable for a wide range of applications. It is relatively easy to drive and has good temperature stability, making it an ideal choice for demanding applications that require high power and efficiency. Its low on-state resistance and gate charge, combined with its good drain to source breakdown voltage, make it suitable for a variety of applications. Finally, its internal limiting diode make it an even more attractive option for power applications.

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