FQD8P10TM_SB82052

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The FQD8P10TM_SB82052 is a single N-channel enhancement mode MOSFET which is designed to satisfy the requirements of a medium to high current application for DC-DC conversion and low-voltage high-current switching. Its superior feature-set and reasonable price make the FQD8P10TM_SB82052 a natural choice for many applications. This article will discuss the application field and working principle of the FQD8P10TM_SB82052.

Application Field

The FQD8P10TM_SB82052 is well suited to a wide range of applications due to its high power handling capability, excellent layout flexibility and low on-resistance per area. It is capable of withstanding the harsh operating conditions common in DC-DC converters and low voltage high power switching applications. It is suitable for use in low standby current, high frequency, power factor communication and motor speed control systems.

The FQD8P10TM_SB82052 can be used in DC-DC conversion applications to provide high operating current, allow efficient thermal management and provide a high voltage standing wave ratio. In addition, it is suitable for the protection of power devices from short circuits and electro-static discharge. Finally, this device is a suitable choice for low-voltage high-current switching applications due to its fast switching speed and excellent noise immunity.

Working Principle

The FQD8P10TM_SB82052 is a depletion-mode MOSFET, meaning that it has a relatively high on-resistance and requires a gate-to-source voltage below the threshold voltage for conduction. This makes the device suitable for applications involving low standby current and high-frequency power factor correction. The device is composed of a P region encapsulated in a N-type body with source and drain terminals and a gate terminal.

When the gate is left at 0V, the N-type body will maintain the P region and there will be no current flow. When the gate-to-source voltage is increased, the N-type body will be electrostatically pulled away from the P region and allow current to flow. This is known as the “Power Enhancement” mode of operation which is used in power MOSFETs.

The current flow can be further increased by reducing the gate-to-source voltage. This is known as the “Subthreshold” mode of operation and is commonly used in low-power applications. The FQD8P10TM_SB82052 works in both of these modes to provide excellent performance for low-voltage high-current switching applications.

The FQD8P10TM_SB82052 also features internal protection diodes which protect the device from electrostatic discharge and short circuit damage. These diodes exhaust the voltage spike which is generated when a high current load is switched off. The device also features a surface-mount package which helps reduce the device’s foot-print, further improving the device’s efficiency.

Conclusion

The FQD8P10TM_SB82052 is an excellent choice for a wide range of applications due to its high power handling capability, excellent layout flexibility and low on-resistance per area. It is suitable for DC-DC conversion applications, low standby current, high frequency, power factor correction and low-voltage high-current switching applications. It also features internal protection diodes which protect the device from electrostatic discharge and short circuit damage. Finally, its surface-mount package helps reduce the device’s foot-print, further improving its efficiency.

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