FQD8P10TM Discrete Semiconductor Products

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The FQD8P10TM is an N-Channel PowerTrench™ MOSFET, with an 8 mOhm typical on-resistance at 4.5 V. It is manufactured using an advanced proprietary process combining DMOS trench technology with on-board electroless Nickel under plate, designed to minimize the risks of formabLMMA and provide low gate charge, fast switching performance, and improved system reliability. This device is optimized for low-voltage, high-current applications, such as power electronic circuits, portable electronic equipment, and other applications that require high efficiency and/or fast switching speeds.

The FQD8P10TM is a high-efficiency and fast-switching device, offering a unique blend of current handling and switching characteristics. It is based on an N-channel MOSFET technology, using current-controlled vertical DMOS trenches to provide a low on-resistance. This device also features a low gate charge to reduce the power loss associated with switching, and is designed to be compatible with both TTL and low-impedance loads. In addition, it is equipped with a built-in under-plate to reduce the risk of formbLMMA, as well as to protect the device from electrostatic discharge (ESD) damage.

The FQD8P10TM operates with a maximum drain-source voltage (VDS) of 20V and a maximum junction temperature (TJ) of 150°C. When operating at lower drain-source voltages, it helps to minimize the power dissipation, making it suitable for high-temperature applications. Its gate-to-source voltage (VGS) rating is also very low, which helps to minimize gate capacitance and to minimize switching losses. The device also offers fast switching speeds and a guaranteed drain current range of -15 A to +10 A. The FQD8P10TM is a packaging powerhouse too, offering a small size package for a variable low-cost solution. Its compact form factor makes it an ideal solution in tight spaces, providing manufacturers with increased system-level integration options.

The FQD8P10TM is a self-protecting device, as it can be used in a wide variety of applications and conditions. Its on-board ESD protection circuitry protects it from an electrostatic discharge of up to 1.2 kV. It also features a built-in under-plate to protect the device from formabLMMA and to reduce the risk of short circuit damage due to the accumulation of static charges. Moreover, the FQD8P10TM offers a low RDS(on) value that helps to reduce the power dissipation associated with switching, maximizing the efficiency of the application.

The working principle of the FQD8P10TM is very simple. It is based on a MOSFET structure, with the device\'s gate connected to the source, and the current passing through the channel between the drain and the source. When a voltage (VGS) is applied to the gate, this voltage modifies the shape of the electric field between the two electrodes, allowing current to flow through the channel. The amount of current flow is directly related to the magnitude of the voltage applied to the gate. This voltage can be either positive (+VGS) or negative (-VGS), depending on the device used. A positive voltage in the gate will cause the drain-source voltage to increase, while a negative voltage will decrease the drain-source voltage.

The FQD8P10TM is a versatile and reliable device that is suitable for a variety of applications. It is a low-voltage, high-current device, with a maximum drain-source voltage rating of 20V and a maximum junction temperature of 150°C. Its low gate charge and fast switching speeds make it well-suited for high-efficiency systems, such as power electronic circuits and portable electronic equipment. Additionally, its built-in ESD protection and under-plate provide extra protection against damages due to static discharge and formabLMMA. The FQD8P10TM is a reliable and powerful device that is designed to meet the needs of modern devices and applications.

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