Allicdata Part #: | FQI32N20CTU-ND |
Manufacturer Part#: |
FQI32N20CTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 200V 28A I2PAK |
More Detail: | N-Channel 200V 28A (Tc) 3.13W (Ta), 156W (Tc) Thro... |
DataSheet: | FQI32N20CTU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 156W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2220pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 82 mOhm @ 14A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQI32N20CTU is a fast switching power MOSFET (metal oxide semiconductor filed effect transistor). This MOSFET is part of a family of power transistors that includes a variety of power levels, on-resistance ratings, operating voltages, gate surge voltages and temperature ranges. The FQI32N20CTU is available in a variety of package types, most commonly the TO-220A package.
The FQI32N20CTU MOSFET is designed for applications that require a very low on-resistance. The FQI32N20CTU has an on-resistance rating of 0.06 ohms and can handle a current of 32 amps. It also has a maximum operating voltage of 200V, making it ideal for power supply applications. The FQI32N20CTU is also capable of switching at frequencies up to 25MHz, making it suitable for high-speed applications.
The distinguishing feature of the FQI32N20CTU is its “gate surge voltage” rating. This allows devices with a low VGS (gate-source voltage) to operate in higher voltage applications without damage. The FQI32N20CTU has a maximum gate surge voltage of -64V. This high gate surge voltage enables the device to handle large transient voltages without damage.
The working principle of a FQI32N20CTU power MOSFET is based on the same principle as that of most other power semiconductor devices. A small voltage applied to the gate terminal controls the voltage across the drain and source terminals. When a gate voltage is applied, the drain-source channel forms and the current passes through the channel. The resistance of the channel determines the current flow and the voltage across the drain and source terminals.
The FQI32N20CTU can be used in a variety of applications. It is often used in high-power switching circuits, where its fast switching speed and low on-resistance rating make it an ideal choice. It is also often used in high voltage DC/DC converters, motor-control circuits, and high-efficiency switching power supplies. Furthermore, its impressive gate surge voltage rating allows the device to handle large transient voltages without damage.
The FQI32N20CTU is an impressive power MOSFET with a variety of features and advantages. Its low on-resistance, high gate surge voltage, and fast switching speed make it ideal for a variety of power switching applications. Its ability to handle large transient voltages without damage makes it perfect for high-voltage applications. And its wide variety of package types make it suitable for a variety of layout scenarios.
The specific data is subject to PDF, and the above content is for reference
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