FQI3N90TU Allicdata Electronics
Allicdata Part #:

FQI3N90TU-ND

Manufacturer Part#:

FQI3N90TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 900V 3.6A I2PAK
More Detail: N-Channel 900V 3.6A (Tc) 3.13W (Ta), 130W (Tc) Thr...
DataSheet: FQI3N90TU datasheetFQI3N90TU Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK (TO-262)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: QFET®
Rds On (Max) @ Id, Vgs: 4.25 Ohm @ 1.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The FQI3N90TU is a power MOSFET field effect transistor with a high current rating and low on-resistance. Its widespread use in the automotive industry is partly due to its high power efficiency, ease of use, and reduced cost. In addition, due to its high current rating, the transistor is suitable for various applications including power converters, motor drives, and power amplifiers. In this article, we will discuss the application field and working principle of the FQI3N90TU.

Applications for the FQI3N90TU

The FQI3N90TU is a power MOSFET with a low on-resistance rating. This means that it can be used for a range of applications requiring large currents, such as power converters, motor drivers, and power amplifiers. It is also suitable for use in automotive and consumer electronic devices, where it can reduce the overall energy consumption. This can be highly beneficial in terms of cost savings, improved system efficiency, and reduced emissions.

The low on-resistance of the FQI3N90TU also means that it can be used to reduce the losses in a power supply and increase system efficiency. This can be particularly beneficial in applications such as motor and actuator control, where the current demand is often high and losses need to be minimized. In addition, the transistor can also be used in audio power amplifiers, where it can reduce the distortion and improve the sound quality.

Working Principle of the FQI3N90TU

The FQI3N90TU is an N-type MOSFET, which means that it employs an N-type semiconductor material and is operated in enhancement mode. In this mode, the transistor is normally "off", and voltage is applied across the drain and gate terminals to switch the transistor on. The voltage must be above a certain threshold level in order to create a "gate field", which allows electrons to flow from the source to the drain. This current then passes through the circuit, allowing the transistor to serve its purpose.

The distinctive feature of the FQI3N90TU is its low on-resistance rating. This is determined by the characteristics of the semiconductor material used and the construction of the transistor. The low on-resistance allows the transistor to offer high current ratings and energy efficiencies, making it suitable for power conversion and motor control applications.

Conclusion

The FQI3N90TU is a power MOSFET field effect transistor with a high current rating and low on-resistance. It is suitable for use in power converters, motor drivers, and power amplifiers, as well as for automotive and consumer electronic applications. The distinctive feature of the FQI3N90TU is its low on-resistance rating, which provides high current ratings and energy efficiencies. This makes the FQI3N90TU an ideal choice for applications where power efficiency and cost savings are important considerations.

The specific data is subject to PDF, and the above content is for reference

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