Allicdata Part #: | FQI3N90TU-ND |
Manufacturer Part#: |
FQI3N90TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 900V 3.6A I2PAK |
More Detail: | N-Channel 900V 3.6A (Tc) 3.13W (Ta), 130W (Tc) Thr... |
DataSheet: | FQI3N90TU Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | I2PAK (TO-262) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.13W (Ta), 130W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 910pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 10V |
Series: | QFET® |
Rds On (Max) @ Id, Vgs: | 4.25 Ohm @ 1.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
Drain to Source Voltage (Vdss): | 900V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FQI3N90TU is a power MOSFET field effect transistor with a high current rating and low on-resistance. Its widespread use in the automotive industry is partly due to its high power efficiency, ease of use, and reduced cost. In addition, due to its high current rating, the transistor is suitable for various applications including power converters, motor drives, and power amplifiers. In this article, we will discuss the application field and working principle of the FQI3N90TU.
Applications for the FQI3N90TU
The FQI3N90TU is a power MOSFET with a low on-resistance rating. This means that it can be used for a range of applications requiring large currents, such as power converters, motor drivers, and power amplifiers. It is also suitable for use in automotive and consumer electronic devices, where it can reduce the overall energy consumption. This can be highly beneficial in terms of cost savings, improved system efficiency, and reduced emissions.
The low on-resistance of the FQI3N90TU also means that it can be used to reduce the losses in a power supply and increase system efficiency. This can be particularly beneficial in applications such as motor and actuator control, where the current demand is often high and losses need to be minimized. In addition, the transistor can also be used in audio power amplifiers, where it can reduce the distortion and improve the sound quality.
Working Principle of the FQI3N90TU
The FQI3N90TU is an N-type MOSFET, which means that it employs an N-type semiconductor material and is operated in enhancement mode. In this mode, the transistor is normally "off", and voltage is applied across the drain and gate terminals to switch the transistor on. The voltage must be above a certain threshold level in order to create a "gate field", which allows electrons to flow from the source to the drain. This current then passes through the circuit, allowing the transistor to serve its purpose.
The distinctive feature of the FQI3N90TU is its low on-resistance rating. This is determined by the characteristics of the semiconductor material used and the construction of the transistor. The low on-resistance allows the transistor to offer high current ratings and energy efficiencies, making it suitable for power conversion and motor control applications.
Conclusion
The FQI3N90TU is a power MOSFET field effect transistor with a high current rating and low on-resistance. It is suitable for use in power converters, motor drivers, and power amplifiers, as well as for automotive and consumer electronic applications. The distinctive feature of the FQI3N90TU is its low on-resistance rating, which provides high current ratings and energy efficiencies. This makes the FQI3N90TU an ideal choice for applications where power efficiency and cost savings are important considerations.
The specific data is subject to PDF, and the above content is for reference
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