FQI3P50TU

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FQI3P50TU is a type of single field-effect transistor (FET) designed for very high-speed switching applications. It is a high-voltage, high-current, low ON-resistance N-channel MOSFET. This device is suitable for switching power circuits, high-speed buffering, and other applications that require low ON-resistance, low input capacitance, and fast switching, enabling high-speed device designs.

The FQI3P50TU is an N-channel MOSFET, which means it is constructed with an N-type source, drain and body. The FET consists of two layers of an insulating material, such as silicon dioxide (SiO2), between a source and a drain. An electrically conductive gate material is deposited on the insulating material and the conductive gate is biased by a gate voltage. The gate terminal is isolated from the source and drain terminals. This feature allows the device to be used as a switch between two circuits, since the gate terminal can be used to control the conductivity of the FET.

The FQI3P50TU is characterized by a low off-state drain-to-source leakage current and low ON resistance. This allows the device to be used in high-speed switching applications and provides lower power losses compared to other MOSFETs. The device is an enhancement-mode device, which means that it must be turned on using an appropriate gate voltage. The device turns on when the gate-to-source voltage reaches the threshold voltage and increases the drain-to-source current.

The FQI3P50TU is a high-voltage and high-current MOSFET that can handle a maximum drain-to-source voltage of 25V. The maximum drain-to-source current through the device is up to 128A. The device can be turned on and off by applying an appropriate gate voltage. This feature allows the device to be used for a variety of applications in power electronics, including the switching of power circuits, high-speed buffering, and other applications that require low ON-resistance and fast switching. The device also exhibits low input capacitance, which is beneficial for high-speed switching applications.

The FQI3P50TU is a versatile single FET and can be used in a variety of applications. It is ideal for high-speed switching applications, high-power switching circuits, and other applications that require low ON-resistance and fast switching. The device is well-suited for use in power circuits, high-speed buffering, and other applications that require low ON-resistance and fast switching, enabling high-speed device designs.

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