FQI3N40TU

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK (TO-262)
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	3.13W (Ta), 55W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	230pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	7.5nC @ 10V
Series:	QFET®
Rds On (Max) @ Id, Vgs:	3.4 Ohm @ 1.25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.5A (Tc)
Drain to Source Voltage (Vdss):	400V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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FQI3N40TU is a MOSFET typically used in power electronics. It demonstrates fantastic performance in its application field and working principle, making it a popular choice for engineers and manufacturers. In this article, we will look at the specific application field, working principles and further advantages of the FQI3N40TU.Application FieldThe FQI3N40TU MOSFET is beneficial in switching and especially in power electronics. It can typically be used at frequencies up to 2MHz, making it a great choice for power and motor control applications. The FQI3N40TU is also beneficial in current and voltage regulation. It is capable of accepting control signals that have a range of voltages, such as 10V or 50V. This versatility makes the FQI3N40TU one of the most commonly used MOSFETs in the market.Working PrincipleNow that we know the application field that the FQI3N40TU is most suited for, let’s look at its working principle. The FQI3N40TU is based on an insulated gate field-effect transistor (IGFET). This type of transistor has an insulated gate that is connected to a conductive channel. The gate acts as a control element and is capable of controlling the flow of the current passing through the channel. The FQI3N40TU is a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor has two terminals, called source and drain, to which the current flows when a bias is applied to the gate. The FQI3N40TU adds an additional metal layer between the gate and the semiconductor material, which reduces the capacitance between the gate and the channel. This significantly reduces the power loss and is beneficial in switching applications. The FQI3N40TU also has an integrated drain resistor, which ensures a stable performance in unpredictable and noisy circuits.AdvantagesThe advantages of FQI3N40TU are numerous. The center-tap current sensing feature reduces power dissipation, while the integrated drain resistor prevents disruption due to unexpected noise. The FQI3N40TU also has a fast switching speed, allowing for high-performance applications to take place. It is also capable of accepting a range of voltages, with 10V and 50V being the most common ones. Furthermore, the FQI3N40TU has a drain-source voltage of 400V and a drain current of 28A, making it perfect for high-power applications. Finally, the FQI3N40TU has a temperature coefficient of -1v/°C and an on-state resistance of 65mΩ, which further improves its performance.ConclusionThe FQI3N40TU has proven to be an excellent choice for engineers and manufacturers due to its wide application field, simple working principle and myriad of advantages. Its fast switching speed, reduced power loss and high stability make it the perfect choice for high-power applications. Furthermore, its ability to accept a range of voltages makes it suitable for various types of circuits. The FQI3N40TU is truly a great option for engineers and manufacturers looking for high-performing transistors.

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