FS100R07N2E4B11BOSA1 Allicdata Electronics
Allicdata Part #:

FS100R07N2E4B11BOSA1-ND

Manufacturer Part#:

FS100R07N2E4B11BOSA1

Price: $ 61.61
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 100A
More Detail: IGBT Module Trench Field Stop Three Phase Inverter...
DataSheet: FS100R07N2E4B11BOSA1 datasheetFS100R07N2E4B11BOSA1 Datasheet/PDF
Quantity: 1000
30 +: $ 56.00620
Stock 1000Can Ship Immediately
$ 61.61
Specifications
Series: --
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 650V
Current - Collector (Ic) (Max): 125A
Power - Max: 20mW
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 6.2nF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

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Due to their efficient abilities to handle high currents, high power densities, and high voltages, Insulated Gate Bipolar Transistors (IGBTs) are commonly used in a wide range of industrial applications. The FS100R07N2E4B11BOSA1 is a high performance IGBT module specifically designed for use in even the most demanding industrial applications. This article will discuss the application field and working principle of the FS100R07N2E4B11BOSA1.

The FS100R07N2E4B11BOSA1 IGBT module is designed for use in applications that require high power handling capabilities and a robust and reliable design for the most demanding applications. The FS100R07N2E4B11BOSA1 has a maximum DC collector current rating of up to 100A. Its maximum collector-emitter voltage rating is 700V. It also has a total gate capacity of up to 5.9kV. For improved performance, the module also features a Super-Junction IGBT chip and a diode with an ultra-low forward voltage. This makes the module suitable for applications that require high current and voltage requirements.

The FS100R07N2E4B11BOSA1 IGBT module is commonly used in applications such as inverters, switched-mode power supplies, and drives. In these applications, the IGBT module is responsible for controlling the current flow through the system by regulating the magnitude of the current. In inverters, the IGBT module is used to convert AC to DC power. In switched-mode power supplies, the IGBT module regulates the voltage flow in the system. In drives, the IGBT module is responsible for controlling the speed of the motor by regulating the current flow.

The working principle of the FS100R07N2E4B11BOSA1 IGBT module is quite simple. When the gate of the IGBT module is OFF, the collector-emitter is reversed biased and no current flow is allowed. When the gate of the IGBT module is ON, the collector-emitter is forward biased and current flows through the module. The voltage required to turn the IGBT module ON and OFF is determined by the manufacturer and is typically in the range of 0 to 5V.

The FS100R07N2E4B11BOSA1 IGBT module is an ideal choice for applications that require high current and high power handling capabilities. Due to its robust design and reliable performance, it can be used in many demanding applications. Because of its ability to effectively regulate current and voltage, it is a great choice for applications such as inverters, switches, and drives. The working principle of this IGBT module is relatively simple and it is suitable for use in many applications.

The specific data is subject to PDF, and the above content is for reference

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