FS10R06VE3B2BOMA1 Allicdata Electronics
Allicdata Part #:

FS10R06VE3B2BOMA1-ND

Manufacturer Part#:

FS10R06VE3B2BOMA1

Price: $ 12.15
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT MODULE VCES 600V 10A
More Detail: IGBT Module Three Phase Inverter 600V 16A 50W Cha...
DataSheet: FS10R06VE3B2BOMA1 datasheetFS10R06VE3B2BOMA1 Datasheet/PDF
Quantity: 1000
40 +: $ 11.04330
Stock 1000Can Ship Immediately
$ 12.15
Specifications
Series: --
Part Status: Not For New Designs
IGBT Type: --
Configuration: Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 16A
Power - Max: 50W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Current - Collector Cutoff (Max): 1mA
Input Capacitance (Cies) @ Vce: 550pF @ 25V
Input: Standard
NTC Thermistor: Yes
Operating Temperature: -40°C ~ 150°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FS10R06VE3B2BOMA1 is a module type IGBT that is designed and developed by Eupec. It is an insulated gate bipolar transistor (IGBT) that provides low power consumption, good insulation performance, long working life and good reliability. This module features a drive voltage of 600V and a current rating of 10A. It also has a low on-state voltage drop, high switching speed and low switching noise.

In terms of application field, FS10R06VE3B2BOMA1 can be used in solar energy inverters, electric drives, medical equipment, industrial automation and more. The module is widely used in applications such as solar inverters, electric drives, medical equipment, industrial automation, and electric tooling.

The principle of working of FS10R06VE3B2BOMA1 is based on the interaction between the gate and the emitter. When a gate voltage is applied to the module, a current flows between the emitter and gate, resulting in the formation of a conducting path between the gate and collector. This current flow is cut off when the gate voltage is removed. The robust design of FS10R06VE3B2BOMA1 utilizes the special Nexpol® technology from Eupec which has the advantages of fast switching speed, low ON-state voltage drop and low EMI (electromagnetic interference) .

The Nexpol® technology used in the FS10R06VE3B2BOMA1 IGBT module also provides high insulation capability, general insulation level up to 3000V, and rated insulation voltage up to 800V. The module has a high power conversion efficiency, low power consumption, and can effectively reduce the interference generated when it works.

FS10R06VE3B2BOMA1 is designed to provide reliable and long-time performance. It features a high-precision machinery and electronics package, low power dissipation, and dynamic rated current of up to 30A. This makes it a great choice for applications such as solar energy inverters, electric drives, industrial automation, and electric tooling.

In conclusion, FS10R06VE3B2BOMA1 is a great choice for applications that require high power conversion efficiency and low power consumption. With its wide application range and robust design, it is a reliable and long-time performing IGBT module. The special Nexpol® technology from Eupec employed in the module provides fast switching speed, low ON-state voltage drop and low EMI, as well as high insulation capability.

The specific data is subject to PDF, and the above content is for reference

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