Allicdata Part #: | FS100R12KT3BOSA1-ND |
Manufacturer Part#: |
FS100R12KT3BOSA1 |
Price: | $ 102.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | IGBT MODULE VCES 600V 100A |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | FS100R12KT3BOSA1 Datasheet/PDF |
Quantity: | 1000 |
10 +: | $ 92.81230 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 140A |
Power - Max: | 480W |
Vce(on) (Max) @ Vge, Ic: | 2.15V @ 15V, 100A |
Current - Collector Cutoff (Max): | 5mA |
Input Capacitance (Cies) @ Vce: | 7.1nF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 125°C |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
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FS100R12KT3BOSA1 Application Field and Working Principle
The FS100R12KT3BOSA1 is a three phase insulated gate bipolar transistor (IGBT) module. It is used in high power applications like solar power stations, inverters, motor drives, and traction systems. The module has a very low gate drive current, which results in a high power efficiency. Additionally, it has a very low switching noise and can operate at high junction temperatures. The module is also immune to short circuit protection, making it suitable for high power systems.
Overview of FS100R12KT3BOSA1
The FS100R12KT3BOSA1 is a three phase IGBT module composed of IGBT transistors, each installed with a free wheeling diode. The package is epoxy resin sealed, which ensures good isolation and prevents damage from environmental effects. The module also has a fast switching performance with its low gate drive current, which makes it suitable for high power applications. The module offers a wide operating temperature range of up to -40 to 150°C. Additionally, the module has a variety of certification options, including UL and cUL certification.
Working Principle
The FS100R12KT3BOSA1 module uses insulated gate bipolar transistors as the main component. The module has a low gate drive current which results in a high power efficiency. When the offered voltage across the module is above the IGBT threshold voltage, the voltage is applied to the gate of the IGBT, resulting in an energized allow current from the collector to the emitter. The IGBT allows current to flow through itself and the associated diode that it is coupled with in a reverse direction. When the offered voltage is below the IGBT threshold voltage, the IGBT is no longer conductive. The currents of the IGBT and the associated diode will then dissipate, leading to an increased resistance, which then prevents the current from building up in the circuit and allowing the voltage across the switch to remain low. The module also has an active short circuit protection system, which will stop the current in case of a short circuit event.
Benefits
- High efficiency
- Low gate drive current
- Wide operating temperature range
- High switching frequency
- Short circuit protection
Applications
The FS100R12KT3BOSA1 module can be used in various high power applications, including solar power stations, inverters, motor drives, and traction systems. The module has a low gate drive current, resulting in high efficiency and a low noise operation. Additionally, the module is suitable for high junction temperatures and is immune to short circuit protection.
Conclusion
The FS100R12KT3BOSA1 module is a three phase IGBT module with low gate drive current, which results in a high power efficiency and low switching noise. Additionally, the module is immune to short circuit protection and can operate at high junction temperatures. The module can be used in various high power applications like solar power stations and motor drives.
Overall, the FS100R12KT3BOSA1 module is a great choice for high power applications that require high efficiency and low noise operation.
The specific data is subject to PDF, and the above content is for reference
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