HIP2101EIBT

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The HIP2101EIBT is an advanced monolithic gate driver IC device with integrated asymmetric lift-off protection, bootstrap diode, and either integrated output power MOSFETs or corresponding driven external power MOSFETs.

An understanding of the field of application and operation of the HIP2101EIBT gate driver is essential for engineers a mesaage of designing or application system. This powerful device offers several advantages to those using it in designing power management applications, such as shorter drive to reset time, easier design and improved noise immunity.

Application Field

The HIP2101EIBT is a high performance gate driver IC used for driving high current and/or high energy power MOSFETs and IGBTs in arrays. It provides high output driving current and is fully protected against shoot-through. It is typically used in high voltage applications for controlling switching of AC/DC power in motor control, brushless DC motor control, power factor correction, power converters, and UPS systems.

The HIP2101EIBT is suitable for driving Power MOSFETs, IGBTs, or other power semiconductor devices with low impedance. It contains an asymmetric lift-off protection circuit to prevent spurious triggering of the power switches due to external electrical disturbances. An integrated bootstrap diode also helps reduce external components.

The HIP2101EIBT is designed to operate at voltage ranges of up to 600 V. It has a current capacity of up to 4 A and is RoHS 3 compliant and available in through-hole and SMT packages. This means that it is suitable for applications in areas such as building automation, domestic appliances, and motor control systems.

Working Principle

The HIP2101EIBT is a two-channel gate driver that provides high current source and sink capability and an low output-state resistance. It helps to reduce the noise immunity of power switches and diode clamps, making it an ideal choice for noisy switch-mode power supplies. The gate drive of the HIP2101EIBT includes an asymmetric current-limiting, which ensures that the switch current does not exceed the maximum specified current.

The HIP2101EIBT has an integrated reclosure circuit which eliminates the need for external components. This reclosure circuit also helps to protect against potential surge events. It prevents multiple trips due to soft failures and has low loss. The internal logic of the HIP2101EIBT provides level shifting of the gate drive and level-shifted logic control.

The integrated bootstrap diode of the HIP2101EIBT eliminates the need for an external bootstrap diode. The bootstrap voltage for the control of the power switch is obtained from the Vbb, the high voltage supply of the gate drive. This allows the device to be used with voltage ranges of up to 600 V.

The HIP2101EIBT also provides protection against shoot-through in the power switch by using a proprietary asymmetrical current-limiting circuit. It maintains the current through the power switch below the maximum specified current while minimizing the voltage across the switch. This feature helps to reduce the power dissipation in the switches and also provides improved system noise immunity.

In summary, the HIP2101EIBT is a powerful and reliable gate driver IC that can be used in a wide range of power management applications. It has the advantages of an integrated asymmetrical lift-off protection circuit, an integrated bootstrap diode, and either integrated output power MOSFETs or corresponding driven external power MOSFETs. This makes it suitable for high current, high energy applications and is fully protected against shoot-through. It is typically used in high voltage applications for controlling switching of AC/DC power in motor control, brushless DC motor control, power factor correction, power converters, and UPS systems.

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