Allicdata Part #: | HIP2101IRZ-ND |
Manufacturer Part#: |
HIP2101IRZ |
Price: | $ 1.31 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Intersil |
Short Description: | IC DRVR HALF BRIDGE 100V 16-QFN |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 16-QFN-EP... |
DataSheet: | HIP2101IRZ Datasheet/PDF |
Quantity: | 1000 |
1200 +: | $ 1.19070 |
Current - Peak Output (Source, Sink): | 2A, 2A |
Base Part Number: | HIP2101 |
Supplier Device Package: | 16-QFN-EP (5x5) |
Package / Case: | 16-VQFN Exposed Pad |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Rise / Fall Time (Typ): | 10ns, 10ns |
High Side Voltage - Max (Bootstrap): | 114V |
Input Type: | Non-Inverting |
Series: | -- |
Logic Voltage - VIL, VIH: | 0.8V, 2.2V |
Voltage - Supply: | 9 V ~ 14 V |
Gate Type: | N-Channel MOSFET |
Number of Drivers: | 2 |
Channel Type: | Independent |
Driven Configuration: | Half-Bridge |
Part Status: | Active |
Packaging: | Tray |
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HIP2101IRZ Application Field and Working Principle
HIP2101IRZ is a gate driver integrated circuit (IC) designed for power switching applications that require rapid turn-on and turn-off speeds. This product is included in PMIC – Gate Drivers and is used primarily in dc-dc converters, synchronous and resonant converters, and other high-power applications.
The HIP2101IRZ provides high-voltage, high-current, and high-speed gate drive capabilities. It achieves turn-on and turn-off times of 10 nanoseconds (ns) and 7 nanoseconds (ns) respectively, which is much faster than traditional gate drivers. This gate driver operates over a wide voltage range of 4V to 19V and can draw up to 6.6 amps of gate drive current. It is also very efficient, with a total power dissipation of only 1 watt.
The HIP2101IRZ has a unique architecture which encompasses four independently controlled input and output channels that can be used in series or parallel. This feature allows the IC to be used in multiple phase configurations, such as four-phase, six-phase and multi-phase applications. All four channels are internally protected against overvoltage, overcurrent and over-temperature events.
The HIP2101IRZ is designed with a high-performance gate-drive system, which reduces the FETs’ conduction losses when charging the gate capacitance and therefore increases the efficiency of the power converter stage. This is done using an optimized turn-on and turn-off ramping system. The internal gate drive includes a charge pump, a series of high-current N-channel FETs and fast-switching logic. These components are necessary to quickly switch the FETs’ gates and reduce the presence of switching transients.
The HIP2101IRZ features an on-chip thermal shutdown circuit that protects the device from operating temperature events that can cause damage to the IC. This circuit will shut down the chip if the internal die temperature exceeds a safe level and will only be reactivated when it cools down below the pre-set threshold. It can also be put into a low power mode when the device is not in use, which helps conserve energy.
The HIP2101IRZ is small and robust, with a total die size of 0.91mm x 0.72mm and a TSOP-6 package type. It provides the user with the best combination of power, speed, and size, which makes it ideal for high-power, high-speed applications. Additionally, the device is very low cost and can be easily incorporated into power systems.
In conclusion, the HIP2101IRZ is an ideal IC for any high-power, high-speed applications. It incorporates a unique architecture with four independently controlled channels and an advanced gate drive system. It is also very efficient and can be easily incorporated into power systems. Not only is the HIP2101IRZ fast and robust, but it is also small and low-cost, which makes it a great choice for applications that require rapid turn-on and turn-off times.
The specific data is subject to PDF, and the above content is for reference
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