HIP2101IRZ Allicdata Electronics
Allicdata Part #:

HIP2101IRZ-ND

Manufacturer Part#:

HIP2101IRZ

Price: $ 1.31
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC DRVR HALF BRIDGE 100V 16-QFN
More Detail: Half-Bridge Gate Driver IC Non-Inverting 16-QFN-EP...
DataSheet: HIP2101IRZ datasheetHIP2101IRZ Datasheet/PDF
Quantity: 1000
1200 +: $ 1.19070
Stock 1000Can Ship Immediately
$ 1.31
Specifications
Current - Peak Output (Source, Sink): 2A, 2A
Base Part Number: HIP2101
Supplier Device Package: 16-QFN-EP (5x5)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Rise / Fall Time (Typ): 10ns, 10ns
High Side Voltage - Max (Bootstrap): 114V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Voltage - Supply: 9 V ~ 14 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Independent
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tray 
Description

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HIP2101IRZ Application Field and Working Principle

HIP2101IRZ is a gate driver integrated circuit (IC) designed for power switching applications that require rapid turn-on and turn-off speeds. This product is included in PMIC – Gate Drivers and is used primarily in dc-dc converters, synchronous and resonant converters, and other high-power applications.

The HIP2101IRZ provides high-voltage, high-current, and high-speed gate drive capabilities. It achieves turn-on and turn-off times of 10 nanoseconds (ns) and 7 nanoseconds (ns) respectively, which is much faster than traditional gate drivers. This gate driver operates over a wide voltage range of 4V to 19V and can draw up to 6.6 amps of gate drive current. It is also very efficient, with a total power dissipation of only 1 watt.

The HIP2101IRZ has a unique architecture which encompasses four independently controlled input and output channels that can be used in series or parallel. This feature allows the IC to be used in multiple phase configurations, such as four-phase, six-phase and multi-phase applications. All four channels are internally protected against overvoltage, overcurrent and over-temperature events.

The HIP2101IRZ is designed with a high-performance gate-drive system, which reduces the FETs’ conduction losses when charging the gate capacitance and therefore increases the efficiency of the power converter stage. This is done using an optimized turn-on and turn-off ramping system. The internal gate drive includes a charge pump, a series of high-current N-channel FETs and fast-switching logic. These components are necessary to quickly switch the FETs’ gates and reduce the presence of switching transients.

The HIP2101IRZ features an on-chip thermal shutdown circuit that protects the device from operating temperature events that can cause damage to the IC. This circuit will shut down the chip if the internal die temperature exceeds a safe level and will only be reactivated when it cools down below the pre-set threshold. It can also be put into a low power mode when the device is not in use, which helps conserve energy.

The HIP2101IRZ is small and robust, with a total die size of 0.91mm x 0.72mm and a TSOP-6 package type. It provides the user with the best combination of power, speed, and size, which makes it ideal for high-power, high-speed applications. Additionally, the device is very low cost and can be easily incorporated into power systems.

In conclusion, the HIP2101IRZ is an ideal IC for any high-power, high-speed applications. It incorporates a unique architecture with four independently controlled channels and an advanced gate drive system. It is also very efficient and can be easily incorporated into power systems. Not only is the HIP2101IRZ fast and robust, but it is also small and low-cost, which makes it a great choice for applications that require rapid turn-on and turn-off times.

The specific data is subject to PDF, and the above content is for reference

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