Allicdata Part #: | HIP2100EIBT-ND |
Manufacturer Part#: |
HIP2100EIBT |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Intersil |
Short Description: | IC DRIVER HALF BRIDGE 100V 8SOIC |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 8-SOIC-EP |
DataSheet: | HIP2100EIBT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Driven Configuration: | Half-Bridge |
Channel Type: | Independent |
Number of Drivers: | 2 |
Gate Type: | N-Channel MOSFET |
Voltage - Supply: | 9 V ~ 14 V |
Logic Voltage - VIL, VIH: | 4V, 7V |
Current - Peak Output (Source, Sink): | 2A, 2A |
Input Type: | Non-Inverting |
High Side Voltage - Max (Bootstrap): | 114V |
Rise / Fall Time (Typ): | 10ns, 10ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
Supplier Device Package: | 8-SOIC-EP |
Base Part Number: | HIP2100 |
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PMIC - Gate Drivers
HIP2100EIBT is an ideal gate driver designed for the todays rapidly changing power device requirements. It features adjustable dead times, built-in shoot-through current limiting and integrated high side and low side drivers. By offering all of these features in a very small space, the HIP2100EIBT is an ideal for use in a variety of gate driver applications.
Application Field
The HIP2100EIBT can be used for a variety of gate driver applications. It has been designed for use with power MOSFETs, IGBTs and ISOTOPs, making it ideal for motor control, automotive, oven and HVAC applications. Furthermore, its high ruggedness and high temperature operation makes it the perfect choice for applications requiring high reliability and long-term operation.
It is also ideal for power management applications such as solar cell inverters and battery cell management systems. Its adjustable output levels, extremely low RDS(on) and low power consumption make it ideal for these applications. Furthermore, its integrated thermal protection and current fault protection functions make it extremely safe to operate in these applications.
Working Principle
The HIP2100EIBT is based on two main components: a high side driver and a low side driver. These two components work together to provide the necessary drive current to the MOSFETs, IGBTs and ISOTOPs in the application. The high side driver controls the on-state voltage of the power MOSFETs, while the low side driver controls the off-state voltage of the power MOSFETs. The two drivers can also be used in conjunction with a Source/Sink resistance to further reduce the peaks and decrease the voltage drop on the power MOSFETs.
The HIP2100EIBT also incorporates an adjustable dead time control which reduces losses in the power stage by ensuring that both the high side and low side switches are not ON or OFF at the same time. This prevents shoot-through currents and allows the FETs to be turned ON/OFF in a safe and controlled fashion.
Furthermore, it also has a built-in shoot-through current limiter which limits the current when the FETs are not turned OFF in the correct order. This ensures that the power MOSFETs are not damaged due to the shoot-through current. The HIP2100EIBT also incorporates thermal protection and current fault protection functions to ensure safe operation in all applications.
In summary, the HIP2100EIBT is an ideal gate driver for a variety of power management applications. It offers adjustable dead times, built-in shoot-through current limiting and thermal protection and current fault protection functions, making it an ideal choice for applications requiring high reliability and long-term operation.
The specific data is subject to PDF, and the above content is for reference
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