HIP6601BCB-T

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

HIP6601BCB-T Application Field and Working Principle

Integrated circuit (IC) products used in power management and their application fields are extremely wide, and the HIP6601BCB-T is no exception. It belongs to the field of PMIC - Gate Drivers and is specifically designed to provide low side gate drive for large power control MOSFETs and IGBTs.

The HIP6601BCB-T is composed of a set of low side gate driver power blocks with separate high-current n-channel MOSFET outputs, low side logic level drive by built-in level-shifting circuitry, and programmable under-voltage lockout (UVLO). The built-in MOSFET output stage ensures robust, reliable, and current-limited gate drive, while the logic level drive guarantees compatibility with many kinds of logic interface. Furthermore, the UVLO feature makes the HIP6601BCB-T an ideal choice for protecting power devices against low input voltage and to minimize the inrush current when the supply voltage rises, thus providing a safer and more reliable performance.

Different applications fields require different voltage levels and MOSFET current capabilities. The HIP6601BCB-T offers a wide range of programmable gate drive voltage levels from 4.5V to 24V, and a wide range of MOSFET currents from 1A to 8A. This means that it can be used for many different applications ranging from motor control to power conditioning and other power management functions.

In terms of working principle, the HIP6601BCB-T is designed to act as a level shifter between the drain of the power MOSFET and its gate. When in operation, an input signal is applied to the HIP6601BCB-T, and the output switches appropriately, depending on the logic level the input signal has. The turn-on and turn-off times of the circuit are determined by the RC network connected between the gate of the power MOSFET and the HIP6601BCB-T. When the gate drive signal is applied, the current flows from the drain of the MOSFET to the gate and the voltage across the MOSFET increases until it reaches the desired level and the MOSFET is turned on.

The entire operation process is controlled by the three major voltage nodes of the HIP6601BCB-T: the low-side voltage node, the high-side voltage node, and the signal ground node. The input signal is applied to the low side voltage node and the signal ground node. Then the voltage level of the low side voltage node will be shifted to a logic level compatible with the power MOSFET gate voltage. The voltage shift is accomplished by an internal series resistor and an internal N-channel MOSFET. The resistor and the MOSFET act as buffers and voltage dividers, respectively.

The HIP6601BCB-T also has a programmable under-voltage lockout (UVLO) feature. When the low side voltage node drops below a certain threshold voltage, the MOSFET is turned off and the circuit is secured. This UVLO feature is used to protect the power MOSFET from the effects of low input voltage and to minimize the inrush current when the supply voltage rises, thus providing a safer and more reliable performance.

In summary, the HIP6601BCB-T is an ideal choice for low side gate drive for large power control MOSFETs and IGBTs. With its wide range of programmable gate drive voltage levels and MOSFET current capabilities, it is suitable for many different applications in the field of PMIC - Gate Drivers. It also provides robust, reliable, and current-limited gate drive and UVLO feature to protect the power devices.

The specific data is subject to PDF, and the above content is for reference