HIP6601BCBZA Allicdata Electronics
Allicdata Part #:

HIP6601BCBZA-ND

Manufacturer Part#:

HIP6601BCBZA

Price: $ 1.36
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC DRIVER MOSFET DUAL 8-SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
DataSheet: HIP6601BCBZA datasheetHIP6601BCBZA Datasheet/PDF
Quantity: 1000
980 +: $ 1.23404
Stock 1000Can Ship Immediately
$ 1.36
Specifications
Current - Peak Output (Source, Sink): --
Base Part Number: HIP6601B
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 20ns, 20ns
High Side Voltage - Max (Bootstrap): 15V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 10.8 V ~ 13.2 V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Active
Packaging: Tube 
Description

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The HIP6601BCBZA is a general-purpose gate driver integrated circuit (IC) designed for power management integrated circuit (PMIC) applications. The IC is capable of driving high-side and low-side switches in PMIC configurations, which make it an ideal choice for high performance and power efficiency-oriented applications. This article seeks to discuss the application field and working principle of the HIP6601BCBZA.

Application Fields

The HIP6601BCBZA is designed to drive high side and low side switches in PMIC configurations, enabling dynamic and efficient power management capabilities in a range of applications such as:

  • Portable power systems
  • Smartphone power management
  • Automotive power systems
  • High efficiency DC/DC converters
  • Battery-powered systems
  • High power LED lighting systems
  • Solar-powered systems

The HIP6601BCBZA IC is designed to ensure that every application handles dynamic loads while keeping supply and ground current levels to a minimum. It supports various voltage thresholds including 3.3V, 5V and 12V, allowing it to be easily integrated into various low voltage applications.

Working Principle

The HIP6601BCBZA is a dual channel gate driver IC that operates in a Non-Inverting Push-Pull (NIPP) configuration to drive high side and low side switches. The stages of operation for the device delivered include the following:

  1. When a voltage (Vin) is applied to the gate driver’s input, the gate driver outputs a low-side drive signal to the low side switch.
  2. The low side switch then switches on, closing the circuit between its common node and ground.
  3. When the circuit is closed, a current flows through it, which then boosts the voltage of the common node to the same level as the input voltage.
  4. The gate driver then outputs a high-side drive signal to the high side switch.
  5. The high side switch then switches on, connecting the common node to the load, thereby allowing current to flow.
  6. The load voltage then drops to the pre-defined voltage level determined by the system’s voltage regulator.
  7. To switch off, the gate driver cancels the high-side drive signal and the high side switch disconnects from the load.
  8. The low side drive signal is also cancelled, and the low side switch then open, thereby isolating the common node from ground.

The HIP6601BCBZA features a slew rate control circuit to reduce switch-on and switch-off losses, and thereby improve the system’s overall power efficiency and performance. It also features an undervoltage lockout (UVLO) circuit, which prevents false triggering of the outputs due to voltage droop. The IC also utilizes a high output drive current to ensure fast response of the switches and reduce power loss.

Conclusion

In conclusion, the HIP6601BCBZA is a general purpose gate driver IC designed to drive high side and low side switches in PMIC configurations. It is suitable for a range of applications because of its adjustable voltage thresholds and slew rate control. Furthermore, its undervoltage lockout and high output drive current ensure fast and efficient operations. The device is highly optimized for power-selective designs, making it an ideal choice for PMIC applications.

The specific data is subject to PDF, and the above content is for reference

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