HIP6602BCBZ

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Gate drivers are integrated circuits (ICs) used to deliver high current pulses to a power MOSFET or IGBT. They drive the output transistors in the design of power converters, including industries that require high reliability such as medical and industrial equipment. The HIP6602BCBZ an integrated gate driver IC that supports both N- and P-channel MOSFETs. Its focused high-current outputs are able to solidly drive/sink up to 4A and easily withstand up to 9A short-circuits.

Application Field

The HIP6602BCBZ gate driver IC is extensively used in automotive applications, electronic ballast or power control, LiB chargers, lamp ballast, solar cell applications, and UPS systems. It is ideal for driving automotive HID lamps, DC–DC converters, flyback converters and motor controllers.

Working Principle

The HIP6602BCBZ driver increases motor efficiency and power factor, it also block DC currents. This is done by turning on/off driving transistors using the high-side and low-side gate-driver output voltages, VgsuVgsl, which in turn drives MOSFETs and allows transistors to behave as switches. The high-side gate driver is responsible for controlling the voltage level of the high- side MOSFETs while the low-side gate driver controls the low-side MOSFETs.

The HIP6602BCBZ offers three of the most advanced features in gate driving: low output voltage offset, low RDS(ON) turn-on losses, and minimal propagation delays. The built-in protection features include an undervoltage lockout (UVLO) to protect both the high-side and low-side drivers, as well as over-current protection (OCP) to protect against excessive high currents during over-temperature or short-circuit conditions.

The HIP6602BCBZ is the ideal choice for designs that require high-side/low-side drive, high-current driving, low-cost and low on-resistance. It integrates many advanced features that make it attractive to designers working in a variety of power conversion applications.

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