| Allicdata Part #: | HIP6602BCR-ND |
| Manufacturer Part#: |
HIP6602BCR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Intersil |
| Short Description: | IC DRVR MOSF 2CH SYC BUCK 16-QFN |
| More Detail: | Half-Bridge Gate Driver IC Non-Inverting 16-QFN-EP... |
| DataSheet: | HIP6602BCR Datasheet/PDF |
| Quantity: | 1000 |
| Current - Peak Output (Source, Sink): | -- |
| Base Part Number: | HIP6602B |
| Supplier Device Package: | 16-QFN-EP (5x5) |
| Package / Case: | 16-VQFN Exposed Pad |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 0°C ~ 125°C (TJ) |
| Rise / Fall Time (Typ): | 20ns, 20ns |
| High Side Voltage - Max (Bootstrap): | 15V |
| Input Type: | Non-Inverting |
| Series: | -- |
| Logic Voltage - VIL, VIH: | -- |
| Voltage - Supply: | 10.8 V ~ 13.2 V |
| Gate Type: | N-Channel MOSFET |
| Number of Drivers: | 4 |
| Channel Type: | Synchronous |
| Driven Configuration: | Half-Bridge |
| Part Status: | Obsolete |
| Packaging: | Tube |
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HIP6602BCR is a low voltage and high voltage gate driver produced by Intersil. It has applications in power management integrated circuit (PMIC) and can also be used as a gate driver in automotive, industrial, and home appliance systems. The HIP6602BCR is a dual output device that is intended to drive P-channel and N-channel power MOSFETs (PMOS or NMOS) or IGBTs. It features an input voltage range of 3V to 16V, a total quiescent current of only 250 micro-amps, and a wide input-to-output propagation delay of only 14 nanoseconds. The HIP6602BCR also provides an integrated level shifter, allowing both ports to be directly driven from a 3V or 5V logic signal.
The HIP6602BCR is especially suitable for use in automotive systems where reliability, robustness, and vibration resistance are required. It can also be used in industrial and home appliance systems that require both low-voltage and high-voltage gate drivers. Furthermore, the low quiescent current and low propagation delay of the HIP6602BCR make it an ideal choice for high speed power supply applications. The device features robust ESD protection on both the input and output pins, as well as an integrated thermal shutdown circuit.
The HIP6602BCR features a group of globally optimized parameters and settings, including a pre-driver, internal level shifter, gate driver, and low level pull down output circuit. The pre-driver allows a user to control the rise and fall times of the output signal by adjusting the logic input voltage. The level shifter is used to convert the low-voltage logic signal to a high-voltage signal that can be used to drive the power switch. The gate driver is used to provide the required output current for driving the power device.
The HIP6602BCR provides a high current output short-circuit protection circuit. This circuit monitors the output current and shuts down the outputs when the current exceeds a user-defined limit. The low-level pull down output circuit is used to ensure the output is switched to a low state when the input is removed. This ensures that the device maintains proper functionality even in the presence of a low voltage or open input.
In summary, the HIP6602BCR is a cost-effective, low-voltage, high-voltage gate driver with integrated level shifter, pre-driver, and short-circuit protection. It is suitable for a variety of PMIC applications, automotive systems, and other high-voltage power supply applications that require efficient and reliable operation. Additionally, its low quiescent current and wide propagation delay make it an ideal choice for high speed switches.
The specific data is subject to PDF, and the above content is for reference
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HIP6602BCR Datasheet/PDF