HIP6602BCRZA-T Allicdata Electronics
Allicdata Part #:

HIP6602BCRZA-T-ND

Manufacturer Part#:

HIP6602BCRZA-T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Intersil
Short Description: IC DRVR MOSF 2CH SYC BUCK 16-QFN
More Detail: Half-Bridge Gate Driver IC Non-Inverting 16-QFN-EP...
DataSheet: HIP6602BCRZA-T datasheetHIP6602BCRZA-T Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Current - Peak Output (Source, Sink): --
Base Part Number: HIP6602B
Supplier Device Package: 16-QFN-EP (5x5)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C (TJ)
Rise / Fall Time (Typ): 20ns, 20ns
High Side Voltage - Max (Bootstrap): 15V
Input Type: Non-Inverting
Series: --
Logic Voltage - VIL, VIH: --
Voltage - Supply: 10.8 V ~ 13.2 V
Gate Type: N-Channel MOSFET
Number of Drivers: 4
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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HIP6602BCRZA-T is a supplemental gate drive for high-speed transistor that helps solve the design challenges of increased speed and efficiency in power management integrated circuit (PMIC). It is part of the Gate Drivers series of PMICs, offering features such as fast full output current: 2A peak, sink current and 3A peak source current, supply voltage range of 5V to 25V, combined with a low quiescent: 6mA maximum, enabling the chip to operate under very low power conditions. Furthermore, the HIP6602BCRZA-T also features a fast switching frequency: up to 600kHz with output voltage rising time of 50ns.

The specific application field and working principle of the HIP6602BCRZA-T involves the drive of low-side and high-side power MOSFETs. The chip can be used to provide gate drive and drive signals for two N-Channel power MOSFETs with a control enable logic input. The gate drive level is adjustable with a 0 to 5-V setting range based on the gate bias voltage for each leg. When the control enable is low, the outputs are pulled low-side and high-side drivers are enabled; when the input is high, the outputs low-side and high-side drivers are turned off.

The HIP6602BCRZA-T is best suited for driving N-Channel MOSFETs at high frequencies. The gate drive can be adjusted with an external resistor, providing the flexibility to optimize the gate capacitance of the MOSFET. The device features low power consumption, with only 6mA maximum quiescent current, making it well suited for battery-operated applications. The active current limit and over-temperature protection features provide protection against overload.

In summary, the HIP6602BCRZA-T is a PMIC which belongs to the Gate Drivers series, made for high-speed transistor designs. It offers fast switching frequency, low power consumption and adjustable gate drive, making it suitable for driving of low-side and high-side power MOSFETs for a wide range of applications. With its additional features of active current limit and over-temperature protection, it provides an effective and reliable solution for power management.

The specific data is subject to PDF, and the above content is for reference

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