HIP6604BCR

Current - Peak Output (Source, Sink):	--
Base Part Number:	HIP6604B
Supplier Device Package:	16-QFN (4x4)
Package / Case:	16-VQFN Exposed Pad
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 125°C (TJ)
Rise / Fall Time (Typ):	20ns, 20ns
High Side Voltage - Max (Bootstrap):	15V
Input Type:	Non-Inverting
Series:	--
Logic Voltage - VIL, VIH:	--
Voltage - Supply:	10.8 V ~ 13.2 V
Gate Type:	N-Channel MOSFET
Number of Drivers:	2
Channel Type:	Synchronous
Driven Configuration:	Half-Bridge
Part Status:	Obsolete
Packaging:	Tube

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HIP6604BCR Application Field and Working Principle PMIC - Gate Drivers is the application field of Hip6604BCR. PMIC stands for Power Management Integrated Circuit. It serves as a power controller for microprocessors of portable electronic devices and other integrated electronic systems. Gate Drivers are used for switching and controlling the flow of current from electrical components or devices.The HIP6604BCR is a low-side MOSFET gate driver. It is used in applications where the ground reference is low, such as DC/DC buck converters. This MOSFET gate driver is designed to provide switching of one or more low side MOSFET/IGBTs in synchronous rectification applications. It is available in a small 8-pin SOIC package and is RoHS compliant for applications that require lead-free solders.The MOSFET gate driver logic consists of two drivers, namely the high-side driver (GND) and the low-side driver. The low-side driver has a Gate-Emitter voltage range of -12V to +100mV, while the high-side driver has a Gate-Source voltage range of +12V to +100mV. The two drivers allow for bidirectional switching for both low side and high side load switching. The MOSFET gate driver provides a Logic “0” output to turn the MOSFET/IGBT off and a Logic “1” output to turn the MOSFET on. The operating temperature ranges from -40 to +85°C. It has an output current of +2A and peak current of 5A. The total supply voltage range is from 14V to 20V. The HIP6604BCR gate driver offers high efficiency due to its integrated MOSFET drive capability. This driver is capable of driving a variety of MOSFET/IGBTs, allowing for a wide range of applications. It offers fast switching times (100ps typ switching times) and adjustable slew rates for optimized performance and design.The HIP6604BCR gate driver provides an effective solution for high power and reliability. With its low On-resistance, low thermal resistance and wide input/output voltage range, it is ideal for applications such as high power LED drivers, LED arrays, automotive, industrial and other applications that require power management.In conclusion, the HIP6604BCR gate driver is an efficient and reliable solution for applications that require high power and a wide operating temperature range. It offers bidirectional switching, adjustable slew rates, fast switching times and low thermal resistance. With its integrated MOSFET drive capability, it is ideal for applications that require power management.

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