![HMC715LP3ETR Allicdata Electronics](https://files.allicdata.com/upload/common/default.jpg)
Allicdata Part #: | HMC715LP3ETR-ND |
Manufacturer Part#: |
HMC715LP3ETR |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC MMIC AMP LNA PHEMT 16-QFN |
More Detail: | RF Amplifier IC LTE, WiMax 2.1GHz ~ 2.9GHz 16-QFN ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Frequency: | 2.1GHz ~ 2.9GHz |
P1dB: | 19.5dBm |
Gain: | 19dB |
Noise Figure: | 0.9dB |
RF Type: | LTE, WiMax |
Voltage - Supply: | 3 V ~ 5 V |
Current - Supply: | 95mA |
Test Frequency: | 2.9GHz |
Package / Case: | 16-VFQFN Exposed Pad |
Supplier Device Package: | 16-QFN (3x3) |
Base Part Number: | HMC715 |
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RF Amplifiers are an important component in many wireless communication systems. HMC715LP3ETR is a high performance low-power amplifier module with excellent linearity characteristics.
HMC715LP3ETR is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) power amplifier (PA) designed for military and commercial communications systems operating in the 7 GHz frequency range. The device provides high linearity performance with low power consumption and small size. It is optimized for output power levels up to +27 dBm and provides up to 40 dBm of third-order intercept point performance.
This amplifier module is designed to amplify signals from 90 MHz to 6 GHz, with a bias current of 700mA. The DC supply voltage of this device ranges from 5.0 to 7.0 V, and the quiescent current is 8 mA. The device gain is 17 dB, the output power at 1 dB gain compression is 27 dBm and the noise figure is 8.5 dB. The maximum output power of the amplifier is 33 dBm, and the input return loss is 14dB.
An essential feature of HMC715LP3ETR is the high linearity performance. The third order intercept point (IP3) is 40 dBm, ensuring that the signal is amplified without introducing intermodulation distortion products. The signal-to-noise ratio (SNR) is higher than 55dB. The total harmonic distortion (THD) of the device is less than -40dB. These features make this amplifier module an ideal choice for high-power linear applications such as radio systems and microwave radar systems.
The HMC715LP3ETR works by amplifying an input signal and then coupling it to the output port. It is made up of four main stages containing active and passive components. The first stage performs the initial amplification of the signal, which is then passed through a band-pass filter. The second stage is an amplifier which provides additional gain, before the signal is brought to the output amplifier. Here, the signal is amplified to its final level before it is sent to the output. The output amplifier section is designed to provide the highest output power with the highest linearity.
The HMC715LP3ETR has a wide range of application areas due to its flexible design, high power handling and linearity performance. It is used in communication systems, satellite link equipment, surveillance and ground-based radar systems, and other RF applications requiring high linearity performance at high power levels. The device is also suitable for use in military and aerospace applications, such as missile guidance.
In conclusion, the HMC715LP3ETR is a high-performance, low-power, GaAs MMIC power amplifier module with superior linearity characteristics. The device has a wide range of application fields, such as military and aerospace, and provides high power handling and linearity performance. This makes the HMC715LP3ETR an ideal choice for use in many RF applications and in wireless communication systems.
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