HMC717LP3E RF/IF and RFID

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The HMC717LP3E is a monolithic amplifier designed for low-noise amplifiers for RF applications. It is a GaAs MMIC amplifier that covers a frequency range of DC to 3GHz. This amplifier includes an integrated metal-oxide-semiconductor (MOS) field-effect transistor (FET) gain control and output stages for operation and excellent linearity and low noise performance.

The HMC717LP3E has an extremely wide range of applications, from mobile cell phones and wireless communication equipment to Broadband and CATV systems, amplifying signals from RF radios as well as from medical equipment.

The working principle of the HMC717LP3E is based on the FET-input, cascode current-feedback amplifier architecture, with a high-gain error amplifier designed to provide stable gain with very low power consumption and stability. The FET input stage provides low-noise and wideband gain response, while the cascode output stage produces excellent linearity, power efficiency, and high output power.

The amplifier incorporates a high-linearity, high-gain power-added efficiency (PAE) control circuit. The PAE control circuit, which is a feature exclusively available in this device, enables the bias current control to be optimized for linear gain with very low power consumption. In addition, the amplifier is able to operate at 3V while providing a high-gain response. This makes the amplifier suitable for applications requiring the highest performance without the need for complex power control.

The HMC717LP3E is designed with low-noise-input-stage circuitry and it also incorporates a low-noise-characteristics control circuitry to minimize the noise or improve the low-frequency response. Moreover, the amplifier has a fast response time and wide dynamic range, allowing it to operate over a variety of input signals with minimal noise.

The HMC717LP3E is an ideal choice for applications where low-noise, high-gain, low-power, and high-efficiency amplifications are essential. This device is well suited for a wide variety of RF applications, including RF transceivers, wireless LAN radios, military radios, and medical imaging systems.

The specific data is subject to PDF, and the above content is for reference