
Allicdata Part #: | 1127-1546-ND |
Manufacturer Part#: |
HMC719LP4E |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC MMIC AMP LNA PHEMPT 24-QFN |
More Detail: | RF Amplifier IC LTE, WiMax 1.3GHz ~ 2.9GHz 24-SMT ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Cut Strip |
Part Status: | Obsolete |
Frequency: | 1.3GHz ~ 2.9GHz |
P1dB: | 21.5dBm |
Gain: | 35dB |
Noise Figure: | 1dB |
RF Type: | LTE, WiMax |
Voltage - Supply: | 3V, 5V |
Current - Supply: | 272mA |
Test Frequency: | -- |
Package / Case: | 24-VFQFN Exposed Pad |
Supplier Device Package: | 24-SMT (4x4) |
Base Part Number: | HMC719 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
RF amplifiers are electrical circuit components capable of amplifying a signal to a level far greater than that of the input signal. The HMC719LP4E is an example of an RF amplifier that offers small size and high linearity for low power applications. This part offers excellent performance in a variety of applications such as point-to-point radio links, avionic transmitters, and satellite communication systems.
The HMC719LP4E is a wideband amplifier featuring a very wide dynamic range and exceptional linearity over a wide range of frequencies. It also offers excellent noise performance, low distortion, and low second-order harmonic behavior. The part also includes a bypass mode switch for disabling the amplifier stages. Additionally, it has a temperature range of -40 to +85oC for reliable operation in extreme environmental conditions.
The HMC719LP4E is an integrated module with a highly efficient design that allows use without active cooling. It comes in a small package suitable for a variety of applications, making it an ideal choice for a wide range of applications. The amplifier is supplied in a 4x4 mm QFN package, which is one of the smallest packages available for high power amplifiers.
The working principle of the HMC719LP4E RF amplifier is based on the use of two monolithic gallium arsenide (GaAs) die. The first die acts as an input buffer stage that helps to match the input signal with the amplifier\'s core. The second die is the actual RF amplifier stage, which can provide up to 27dB of gain. The output from the amplifier can be tuned to a range of frequencies and offers a high degree of customization. Additionally, the amplifier is designed to offer excellent linearity, low noise, and low distortion for optimal performance.
The HMC719LP4E RF amplifier is an excellent choice for a variety of applications such as point-to-point radio links, avionic transmitters, and satellite communication systems. The robust design and wide frequency range make it an excellent choice for a variety of system designs. Additionally, the comprehensive features and characterizations make the HMC719LP4E an ideal choice for any low-power applications.
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