HMC719LP4E Allicdata Electronics
Allicdata Part #:

1127-1546-ND

Manufacturer Part#:

HMC719LP4E

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Analog Devices Inc.
Short Description: IC MMIC AMP LNA PHEMPT 24-QFN
More Detail: RF Amplifier IC LTE, WiMax 1.3GHz ~ 2.9GHz 24-SMT ...
DataSheet: HMC719LP4E datasheetHMC719LP4E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Cut Strip
Part Status: Obsolete
Frequency: 1.3GHz ~ 2.9GHz
P1dB: 21.5dBm
Gain: 35dB
Noise Figure: 1dB
RF Type: LTE, WiMax
Voltage - Supply: 3V, 5V
Current - Supply: 272mA
Test Frequency: --
Package / Case: 24-VFQFN Exposed Pad
Supplier Device Package: 24-SMT (4x4)
Base Part Number: HMC719
Description

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RF amplifiers are electrical circuit components capable of amplifying a signal to a level far greater than that of the input signal. The HMC719LP4E is an example of an RF amplifier that offers small size and high linearity for low power applications. This part offers excellent performance in a variety of applications such as point-to-point radio links, avionic transmitters, and satellite communication systems.

The HMC719LP4E is a wideband amplifier featuring a very wide dynamic range and exceptional linearity over a wide range of frequencies. It also offers excellent noise performance, low distortion, and low second-order harmonic behavior. The part also includes a bypass mode switch for disabling the amplifier stages. Additionally, it has a temperature range of -40 to +85oC for reliable operation in extreme environmental conditions.

The HMC719LP4E is an integrated module with a highly efficient design that allows use without active cooling. It comes in a small package suitable for a variety of applications, making it an ideal choice for a wide range of applications. The amplifier is supplied in a 4x4 mm QFN package, which is one of the smallest packages available for high power amplifiers.

The working principle of the HMC719LP4E RF amplifier is based on the use of two monolithic gallium arsenide (GaAs) die. The first die acts as an input buffer stage that helps to match the input signal with the amplifier\'s core. The second die is the actual RF amplifier stage, which can provide up to 27dB of gain. The output from the amplifier can be tuned to a range of frequencies and offers a high degree of customization. Additionally, the amplifier is designed to offer excellent linearity, low noise, and low distortion for optimal performance.

The HMC719LP4E RF amplifier is an excellent choice for a variety of applications such as point-to-point radio links, avionic transmitters, and satellite communication systems. The robust design and wide frequency range make it an excellent choice for a variety of system designs. Additionally, the comprehensive features and characterizations make the HMC719LP4E an ideal choice for any low-power applications.

The specific data is subject to PDF, and the above content is for reference

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