
HMC760LC4BTR-R5 RF/IF and RFID |
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Allicdata Part #: | HMC760LC4BTR-R5-ND |
Manufacturer Part#: |
HMC760LC4BTR-R5 |
Price: | $ 224.39 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | IC AMP TRACK&HOLD 4GS/S 24SMD |
More Detail: | RF Amplifier IC 0Hz ~ 5GHz 24-SMT (4x4) |
DataSheet: | ![]() |
Quantity: | 1000 |
500 +: | $ 203.99100 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Frequency: | 0Hz ~ 5GHz |
P1dB: | -- |
Gain: | -- |
Noise Figure: | -- |
RF Type: | -- |
Voltage - Supply: | 1.9 V ~ 2.1 V |
Current - Supply: | 72mA |
Test Frequency: | -- |
Package / Case: | 24-TFQFN Exposed Pad |
Supplier Device Package: | 24-SMT (4x4) |
Base Part Number: | HMC760 |
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An RF amplifier is a type of electronic amplifier used to increase the signal strength of a radio frequency (RF) signal. The HMC760LC4BTR-R5 Amplifier is a gallium-arsenide field-effect transistor (GaAs FET) amplifier commonly utilized in a range of different wireless applications.
Application Field
The HMC760LC4BTR-R5 Amplifier is an ideal choice for applications in which a wide range of dynamic range, low noise, and high linearity is required. Common applications include point-to-point transmission systems, point-to-multipoint systems, public safety, WiMAX, 802.11a/b/g/n, booster amplifiers, and wireless local and metropolitan area networks (WLAN/MAN). The amplifier is designed to cover the frequency range of 600MHz to 3000MHz with WR-42 waveguide flange or SMA feedthrough. The amplifier provides a gain of 17dB at a P1dB output of 11dBm.
Working Principle
The working principle of the HMC760LC4BTR-R5 Amplifier is based on the basic principles of electronics. The amplifier employs two stages of RF amplification with good linearity and low noise figure. The first stage is a low-noise amplifier (LNA) that produces a gain of 18 dB, and a noise figure of 0.7 dB. The second stage is a power amplifier that provides a gain of 40 dB, a P1dB of 11 dBm, and an output third-orderintercept point (OIP3) of 21 dBm. Both stages are powered by a 3-stage voltage-controlled bias circuitry which maintains an excellent balance between linearity and power efficiency.
Additionally, the amplifier also employs an on-chip power detector, which enables accurate measurement of both the output power and gain of the amplifier. This feature is particularly useful in systems which are used in wireless communication applications, where the exact signal strength needs to be monitored. The power detector can also protect the amplifier from overdriving and thermal runaway.
Conclusion
In conclusion, the HMC760LC4BTR-R5 Amplifier is a robust, high-performance RF amplifier ideal for various applications in the wireless industry. The amplifier features two stages of RF amplification, and a 3-stage voltage-controlled bias circuitry that provides good linearity and power efficiency. Additionally, the amplifier is equipped with an on-chip power detector, which ensures accurate measurement of both the output power and gain of the amplifier.
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