| Allicdata Part #: | HMC816LP4ETR-ND |
| Manufacturer Part#: |
HMC816LP4ETR |
| Price: | $ 0.00 |
| Product Category: | RF/IF and RFID |
| Manufacturer: | Analog Devices Inc. |
| Short Description: | IC AMP LNA DUAL PHEMT 24-QFN |
| More Detail: | RF Amplifier IC General Purpose 230MHz ~ 660MHz 24... |
| DataSheet: |  HMC816LP4ETR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Frequency: | 230MHz ~ 660MHz |
| P1dB: | 21dBm |
| Gain: | 22dB |
| Noise Figure: | 0.5dB |
| RF Type: | General Purpose |
| Voltage - Supply: | 3V, 5V |
| Current - Supply: | 97mA |
| Test Frequency: | -- |
| Package / Case: | 24-VFQFN Exposed Pad |
| Supplier Device Package: | 24-QFN (4x4) |
| Base Part Number: | HMC816 |
Description
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RF amplifiers are power amplifiers used to amplify the microwave signal of radio frequency (RF) devices. The HMC816LP4ETR amplifier is a general purpose amplifier that is designed for use in military, medical, industrial and commercial applications. It is an ideal amplifier for applications where high efficiency and wide linearity are required.The HMC816LP4ETR amplifier uses gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) technology for its high power applications. The HBT technology provides superior performance by combining the characteristics of a bipolar junction transistor (BJT) with the enhanced performance of a heterojunction. This gives the amplifier linearity, efficiency, and power-handling capability that are higher than what is available from other GaAs gain block amplifiers.The HMC816LP4ETR amplifier is designed with a small signal gain of approximately 23 dB, a small signal gain flatness of ±2 dB, and an input return loss of 8 dB. The amplifier also has a large signal gain of 18 dB, large signal gain flatness of ±0.8 dB, and output return loss of 8 dB. The amplifier features a unique circuit design which reduces distortion and improves efficiency. The amplifier is able to operate from a supply voltage of +4.75 to +5.25 Volts with a typical power consumption of 350 mA. The amplifier is also able to operate from a range of temperatures of -30°C to +85°C.The HMC816LP4ETR amplifier has many uses in various applications. It can be used in base stations, wireless networks, military radios, mobile radio systems, radar systems, test and measurement equipment, and communication systems. It can be used in systems that require wideband, linear amplifiers with low noise and high gain. The amplifier is also suitable for use in applications that require high isolation and high linearity.The HMC816LP4ETR amplifier is capable of a wide range of applications, with many benefits. It has low noise compared to other GaAs amplifiers. It has low harmonic distortion, due to its low-distortion circuit design. The amplifier also has high linearity, high efficiency and high output power. The amplifier is also designed to be energy efficient, with low power consumption.The HMC816LP4ETR amplifier is a general purpose amplifier ideal for use in military, medical, industrial and commercial applications. It provides improved performance in comparison to other GaAs gain block amplifiers. The amplifier has excellent linearity, efficiency, low noise, low distortion and wide bandwidth. The amplifier is able to operate from a range of temperatures and has high gain, high output power and low power consumption. It is an ideal amplifier for applications which require high efficiency, wide linearity and low noise.
The specific data is subject to PDF, and the above content is for reference
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