
Allicdata Part #: | HMC863ALC4-ND |
Manufacturer Part#: |
HMC863ALC4 |
Price: | $ 26.19 |
Product Category: | RF/IF and RFID |
Manufacturer: | Analog Devices Inc. |
Short Description: | AMPLIFIER |
More Detail: | RF Amplifier IC General Purpose 24GHz ~ 29.5GHz 24... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 23.80770 |
Series: | -- |
Part Status: | Active |
Frequency: | 24GHz ~ 29.5GHz |
P1dB: | 27dBm |
Gain: | 24dB |
Noise Figure: | 5dB |
RF Type: | General Purpose |
Voltage - Supply: | 4 V ~ 6 V |
Current - Supply: | 350mA |
Test Frequency: | 24GHz ~ 29.5GHz |
Package / Case: | 24-CLCC Exposed Pad |
Supplier Device Package: | 24-LCC (4x4) |
Base Part Number: | HMC863 |
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.A RF amplifier is an electronic device which is used to amplify low power electrical signals to a desired level. The RF amplifier amplifies electrical signals at radio frequencies (RF). In relation to this, the HMC863ALC4 is a type of RF amplifier IC suitable for driving load impedances up to 75 ohms. It is a power amplifier with a specified gain of 18 dB and output power of +33 dBm at 1 dB gain compression. It has a single-ended output design, and is a broadband amplifier which covers a frequency range of DC-6GHz. It also features linearity and low insertion losses.
The common application field of the HMC863ALC4 are base station amplifiers, CATV amplifiers, telecommunications, data communication, mobile device drivers, high power broadband amplifiers, modulation driver amplifiers pre-driver amplifiers, limiter amplifiers, and super-heterodyne LNA/RF detectors. This wide array of applications is largely due to the amplifier’s combination of high gain, output power, and broadband operation.
The working principle of the HMC863ALC4 is based on the field effect transistor (FET). Its performance is attributed to the monolithic design, which provides low noise Figure of Merit and low return loss,and the amplifier’s advantageon the input/output impedance match. For a wide bandwidth and gain, multiple FET transistor stages are cascaded, resulting in very high power gain and high linearity performance when compared to other RF amplifier ICs.
The HMC863ALC4 also utilizes specific biasing techniques, which ensures low distortion levels. The amplifier also filters undesired harmonics, which are generated by the paralleled FET transistors of the amplifier, by utilizing a low-pass filter. The low-pass filter removes any spurious signals generated the FET transistor.
For weight and space purposes, the HMC863ALC4 also includes a temperature protection system on the package, which limits the bias voltage when the junction temperature exceeds its specified high temperature limit. As well, it includes a voltage regulating system, which enables the power supply to run at a constant voltage.
Overall, the HMC863ALC4 is a reliable and efficient RF amplifier IC, and can be used in a wide range of applications. Its various features, such as the monolithic design, low noise figure of merit, high linearity performance, specific biasing techniques, and temperature protection system, all contribute to the amplifier’s high level of performance and reliability.
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