IPC218N04N3X1SA1 Allicdata Electronics
Allicdata Part #:

IPC218N04N3X1SA1-ND

Manufacturer Part#:

IPC218N04N3X1SA1

Price: $ 1.76
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 2A SAWN ON FOIL
More Detail: N-Channel 40V 2A (Tj) Surface Mount Sawn on foil
DataSheet: IPC218N04N3X1SA1 datasheetIPC218N04N3X1SA1 Datasheet/PDF
Quantity: 1000
6195 +: $ 1.58368
Stock 1000Can Ship Immediately
$ 1.76
Specifications
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 10V
Package / Case: Die
Supplier Device Package: Sawn on foil
Mounting Type: Surface Mount
Operating Temperature: --
Power Dissipation (Max): --
FET Feature: --
Vgs (Max): --
Vgs(th) (Max) @ Id: 4V @ 200µA
Series: OptiMOS™
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk 
Description

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A field-effect transistor (FET) is a type of transistor commonly used in modern integrated circuits, particularly as a method of stepper motor control or as switches. This makes it useful in many automated systems. FETs are most often made of semiconductor materials such as silicon and germanium, and are usually composed of several interconnected gates. One of the most popular types of FETs is the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). One of the least popular types is the Insulated-Gate FET (IGFET), also known as an Isolated-Gate FET. However, the most popular type of FET is the Insulated-Gate Bipolar Transistor (IGBT).

The IPC218N04N3X1SA1 is a MOSFET Single and an Insulated-Gate Field-Effect Transistor (IGFET). This type of transistor is an input stage device that is used to switch a high-impedance input signal to a low-impedance output. The gate of the transistor is isolated from the substrate, thus reducing the effects of substrate leakage currents. The gate voltage on the device is determined by the input voltage. The input signal is transferred from the input gate to the output gate changer by a voltage-controlled oscillator. This voltage-controlled oscillator is capable of high speed switching and hence very fast response time.

The main application field of the IPC218N04N3X1SA1 is stepper motor control. In this area, it is used to control the sequence of steps that need to be taken in order to turn a motor at specific speed and direction. The IPC218N04N3X1SA1 can be used to switch the current at high speed, thus allowing the motor to run in a more efficient manner. This device also has some other applications, such as power bus switches, speaker protection circuits and mouse filters.

The working principle of the IPC218N04N3X1SA1 is based on the conversion of a high-impedance input signal to a low-impedance output. The input signal is voltage-controlled, which means that the gate voltage is directly influenced by the input signal. The output signal is then obtained through a voltage-controlled oscillator, which is used to switch the output signal at high speed. This device is ideal for applications such as stepper motor control, where it can be used to switch the motor at very fast speed.

In conclusion, the IPC218N04N3X1SA1 is a MOSFET single and an insulated-gate field-effect transistor (IGFET), which is used to switch a high-impedance input signal to a low-impedance output. Its main application field is stepper motor control, while it can also be used as a power bus switch, speaker protection circuit and mouse filter. The working principle of this FET is based on the conversion of a high-impedance input signal to a low-impedance output, using a voltage-controlled oscillator for speed switching.

The specific data is subject to PDF, and the above content is for reference

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