IPC218N06N3X7SA1

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The IPC218N06N3X7SA1 is a type of single-discrete MOSFET suitable for high-current, high-voltage switching and linear applications. The device is a high-speed, low gate charge, externally compensated MOSFET, designed to reduce losses associated with gate drive and switching losses. The device has a wide range of application areas and is used in a variety of industries.

The IPC218N06N3X7SA1 features a 45V drain-source forward blocking voltage rating, a 6A drain current rating and a low 0.12R on-state drain-source resistance. The device also features a fast on-state switching capability with a switching time of 0.47us, a fast fall time of 0.41us and a rise time of 0.64us. The device has a low gate threshold voltage of 2.7V, a low input capacitance of 6.8pF and a high breakdown voltage of 550V.

In addition to its fast switching characteristics, the IPC218N06N3X7SA1 has low gate charge and output charge times allowing it to be used in a wide range of applications. The device can be used in high current DC-DC converters, computers and power supplies, motor controls and robotics as well as in audio, video and data communications. The device also has a high drive capability and can switch very quickly, allowing it to be used in high speed switching applications.

The IPC218N06N3X7SA1 is suitable for applications requiring high breakdown voltage, fast switching and high current handling, making it ideal for use in high speed and high current systems, as well as power switching applications.

The IPC218N06N3X7SA1 operates on a principle of setting up an electric field along the body and gate of the transistor. When a signal is applied to the gate, the electric field is strengthened and the transistor is turned “on”. This movement of electric charge causes depletion and build up of holes in the source and drain channels. When the electric field is reversed, the transistor is turned “off” and the holes are discharged, thus returning the device back to its initial state.

The IPC218N06N3X7SA1 is a high-speed and high-current switching device with a wide range of applications in the industry. The device operates on a principle of setting up an electric field along the body and gate of the transistor, allowing it to rapidly turn “on” and “off”. The device has a low gate charge, fast switching times and high breakdown voltage making it ideal for use in high current and switching applications.

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