
Allicdata Part #: | IPC218N04N3X7SA1-ND |
Manufacturer Part#: |
IPC218N04N3X7SA1 |
Price: | $ 1.41 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MV POWER MOS |
More Detail: | |
DataSheet: | ![]() |
Quantity: | 1000 |
6195 +: | $ 1.27512 |
Series: | * |
Part Status: | Active |
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The IPC218N04N3X7SA1 is an N-channel vertical double diffused metal oxide semiconductor field effect transistor (MOSFET) used in various applications. It is a single field effect transistor (FET) type device that is used in both analog and digital signal processing. The IPC218N04N3X7SA1 has a low gate threshold voltage (<4V) and is specified to operate over a wide range of voltages (up to - 200V). The device also features a high drain-source break down voltage, making it suitable for use in high-voltage applications.
The IPC218N04N3X7SA1 is used in a number of different applications, including power switching and amplifying. In power switching applications, it can be used to control the current flow in an electrical circuit. The device is used to turn the circuit on and off based on the gate voltage applied. In amplifying applications, the IPC218N04N3X7SA1 is used as an amplifier to boost the signal strength of an input signal.
The working principle of the IPC218N04N3X7SA1 is based on the flow of electrons through an insulating layer between its source and drain. When a positive gate voltage is applied, the electric field that is created attracts electrons from the source to the drain. This increased number of electrons in the drain causes an increase in current flow. To reduce the current flow, the opposite process is applied. The negative gate voltage will repel the electrons from the drain to the source, thereby reducing the current flow.
The IPC218N04N3X7SA1 is also a low-power device. Its low channel resistance, relatively low gate capacitance, and low-voltage capability make it ideal for use in portable electronics. It is well-suited for use in battery-operated devices, as its low power consumption ensures long battery life. Furthermore, the device is relatively stable, making it reliable for use in applications that require precise and consistent current flow.
In summary, the IPC218N04N3X7SA1 is a single FET type device that is used in both analog and digital signal processing. It is used in various applications, including power switching, amplifying, and portable electronics. It features a low gate threshold voltage and is specified to operate over a wide range of voltages. It also has a low current density and low power consumption for applications that require long battery life. Finally, the device is relatively stable, making it reliable for use in precise and consistent current flow scenarios.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
IPC218N04N3X7SA1 | Infineon Tec... | 1.41 $ | 1000 | MV POWER MOS |
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